In legal and professional circles, the concept of formality and documentation plays a pivotal role in ensuring that processes are recognized and respected by all parties involved. Among the myriad of documents and formats that are utilized daily, there exists a specific kind, known simply as "the form," which encompasses a variety of uses and serves numerous functions. From legal affidavits to applications, from contracts to consents, the form is a foundational tool in the conveyance of information, the recording of agreements, and the documentation of consent. It acts not only as a vessel for data but as a bridge between intention and legal recognition, facilitating a multitude of transactions and interactions in both personal and professional realms. The importance of understanding, accurately completing, and correctly utilizing forms cannot be overstated, as these tasks directly impact the efficacy and legality of the endeavors they are associated with. In exploring the major aspects of the form, this article aims to shed light on its significance, the diversity of its applications, and the critical role it plays in the seamless operation of societal, legal, and business frameworks.
| Question | Answer |
|---|---|
| Form Name | Vrt Ic Guide Form |
| Form Length | 37 pages |
| Fillable? | No |
| Fillable fields | 0 |
| Avg. time to fill out | 9 min 15 sec |
| Other names | ic equivalent app, electronic components equivalent book pdf, ic equivalent table, ic equivalent book download |
vrt transistoren, dioden volume 2 0...µ thyristoren, IC A...Z
2
Edition 2010/2011
vrt 0...µ |
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volume 2 |
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part numbers from 0 to µ |
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IN |
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vergleichstabelle |
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comparison table |
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table d’ équivalence |
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W. |
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volume 1b |
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E C ADA |
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comparativa |
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M...Z |
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part numbers frombA to Z |
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...Z |
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details on |
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2010/2011 |
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IN |
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A |
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vergleichstabelle |
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O N |
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thyristor |
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comparison table |
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smd code |
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vrt |
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W |
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table d’ équivalence |
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W. |
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thyristoren, |
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vrts |
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TA |
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volume 1a |
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A...E CLADA |
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diode |
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tabella comparativa |
f |
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pei |
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transistoren, IC |
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A |
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or |
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ic |
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part numbersvrfrom A toofZ |
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Edition |
tabla comparativa |
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d |
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t |
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fe |
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r |
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linearZA...dioden |
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boo |
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Edition 2010/2011 |
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tails on |
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k u |
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pga e X |
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s |
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DATA |
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er |
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B |
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XI V |
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digital |
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IN |
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A |
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vergleichstabelle |
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L |
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S |
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transistor |
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O |
N |
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E |
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|
analog |
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thyristor |
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comparison table |
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volume |
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smd code |
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table d’ équivalence |
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W |
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E |
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W |
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W. |
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TA |
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E C ADA |
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|||||||||||||||||||||||||||
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thyristoren, |
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tabella comparativa |
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s |
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|||||||||||||||||||||||||||||||
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diode |
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f |
pei |
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or v |
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c |
al |
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transistoren,dioden |
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offe |
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ic |
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tabla comparativa |
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rt |
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detai |
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book |
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r |
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AIC...Z |
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ls on |
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u |
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pga |
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s |
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1 |
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Sample pages of the vrt comparison books from ECA Edition 2010/2011
vrt volume 1 from A to Z split into 2 books
vrt1a and vrt1b 1496 pages ISBN
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14 |
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32 |
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Update to |
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Update to |
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Please mail or fax to: ECA Fodermayrstr.24,
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vergleichstabelle comparison table table d' équivalence tabella comparativa tabla comparativa
transistor thyristor smd code diode
ic linear digital analog
ISBN
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IV
vrt volume 1a
Inhaltsverzeichnis
|
Seite |
|
|
Wichtige Hinweise |
VI |
Herstellerabkürzungen |
XXII |
Vergleichstabelle |
2 |
Anschlußzeichnungen |
718 |
|
|
table of contents
|
page |
|
|
Important notes |
IX |
Abbreviations of manufactureres |
XXII |
Comparison table |
2 |
Pin assignment |
718 |
|
|
sommaire
|
page |
|
|
Indications importantes |
XII |
Abréviations des fournisseurs |
XXII |
Table d' équivalence |
2 |
Dessins des raccordements |
718 |
|
|
indice
|
pagina |
|
|
Avvertenze importanti |
XVI |
Abbreviazioni dei Fabbricanti |
XXII |
Tabella comparativa |
2 |
Disegni di terminali |
718 |
|
|
índice
|
página |
|
|
Notas importantes |
XVIII |
Abbreviaciones des los Fabricantes |
XXII |
Tabla comparativa |
2 |
Esquemas de connexion |
718 |
|
|
deutsch
english
français
italiano
español
V
Important Notes on Use
In the following table section the most important semiconductor components – irrelevant as to whether it is dealing with transistors, diodes, thyristors integrated circuits etc. – are listed in strict alphabetical order. The individual types are provided with the most important relevant short data, and – as far as possible and as far as purposeful – suitable comparative types are named. This table is supplemented and extended with every new edition. Old types are never cancelled. Old tables should therefore always be removed (there is absolutely no risk of information loss) thus preventing valuable time being spent on searching through stacks of tables.
english
Column 1 (“Type”)
The type designations correspond to those of the respective manufacturer documentations. They are sometimes stamped on the components themselves in a deviating or abbreviated form.
With several identical type designations of one kind or component (e. g. “BF 232”) the abbreviation of the manufacturer is added in square brackets “[...]” to the type designation.
Selection identifications through added on letters or figures are only then considered if this is important in practice and with type comparison.
Column 2 (“Device”)
Short definition of the semiconductor component.
Used abbreviations:
Integrated circuit (Bipolar, + MOS |
|
|
technology) |
Capacitance diode (Varactor, varicap) |
|
Diac |
|
Digital integrated circuit |
|
DOC |
Dual channel photocoupler |
DPI |
Dual channel photo interrupter |
Memory, nonvolatile, alterable |
|
Memory, nonvolatile, electrically erasable |
|
Memory, nonvolatile, |
|
ER |
Emitter/detector |
FIB IR LD |
Infrared laser diode for fibre optics |
FIB IR LD+MA |
Infrared laser diode with monitor output for |
|
fibre optics |
FIB IR LD+MD |
Infrared laser diode with monitor diode for |
|
Fibre optics |
FIB IR LD+MO |
Infrared laser diode with modulator for fibre |
|
optics |
FIB IR LD+NT |
Infrared laser diode with NTC Resistor for |
|
fibre optics |
FPLA |
= PAL, field programmable |
Fast thyristor |
|
GaAs |
Gallium arsenide |
Germanium diode |
|
Germanium NPN transistor |
|
Germanium PNP transistor |
|
Gate turn off thyristor |
|
Integrated circuit (hybrid technology) |
|
IC |
Integrated circuit |
IR LD |
Infrared laser diode |
IR LD+MA |
Infrared laser diode with monitor output |
IR LD+MD |
Infrared laser diode with monitor diode |
IRED |
Infrared light emitting diode |
IRED+MD |
Light emitting diode |
Input/output IC for microcomputer |
|
Comparator (operational amplifier) |
|
Linear integrated circuit |
|
LD |
Laser diode |
LDR |
Photo Resistor |
LED |
Light emitting diode |
LED/IRED |
Light emitting diode and infrared light- |
|
emitting diode |
With integrated gate protection diode |
|
Metal oxide FET, depletion type |
Metal oxide FET, enhancement type |
|
Integrated circuit (MOS technology) |
|
MP |
Matched emitter/detector |
OC |
Photocoupler |
Opto |
Optoelectronic component |
Operational amplifier |
|
Programmable logic array |
|
PC |
Photo Element |
PD |
Photo Diode (for OPICs with Integrated Linear |
|
Amplifier) |
PD ARRAY |
Photo Diode Array |
PI |
Photo Interrupter |
PIN diode |
|
PIN PD |
PIN Photodiode (for OPICs with Integrated |
|
Linear Amplifier) |
Electrically programmable ROM |
|
PS |
Photo reflective sensor |
PT |
Photo Transistor |
PTR |
Photo Triac |
PUT |
Programmable Unijunction transistor (UJT) |
PYRODET |
Pyrodetector (Infrared Sensor) |
QOC |
Quad channel photocoupler |
RCLED |
Resonant cavity LED |
RED LD |
Red laser diode |
RED LD+MD |
Red laser diode with monitoring diode |
Reference diode (highly stable |
|
SAS |
Silicon asymmetrical switch |
SBS |
Silicon bilateral switch |
Selenium diode |
|
Silicon bridge rectifier |
|
Silicon diode |
|
Silicon NPN transistor |
|
Silicon NPN Darlington transistor |
|
Silicon PNP transistor |
|
Silicon PNP Darlington transistor |
|
|
forward direction) |
SUS |
Silicon unilateral switch |
Tetrode |
P- + |
Thermistor |
Temperature depending resistor |
Thy |
Thyristor |
Thyristor bridge configuration |
|
TOC |
Triple channel photocoupler |
Triac |
|
Linear integrated circuit (TTL technology) |
|
Digital logic circuit (transistor - transistor |
|
|
logic) |
UJT |
Unijunction transistor |
Varistor |
Voltage depending resistor (VDR) |
Voltage regulator, voltage stabilizer |
|
...+Di |
With integrated damper diode |
...+R |
With integrated resistors |
Thyristor for mains operation |
|
Microprocessor, CPU (MOS) |
X
Column 3 (“Short description”)
Short data or description of function of each type.
Used abbreviations:
AAntenna and wideband amplifiers (CATV)
AFC |
Automatic frequency control |
AFT |
Automatic fine tuning |
AGC |
Automatic gain control |
ALC |
Automatic level control |
AM |
RF application (AM range) |
APC |
Automatic phase control |
ARI |
Traffic information system (Germany) |
Array |
Arrangement of numerous elements in a |
|
single case |
asym |
Asymmetrical |
AV |
Audio/Video |
Record/playback amplifier |
BDC forward current gain
Backward |
Backward diode |
RF band switching |
|
bidirektional |
Bidirectional diode |
Br |
Bridge rectifier |
Btx |
Interactive video text |
Camera |
Video camera |
CATV |
Broad band cable amplifier |
CB |
|
CD |
|
Chopper |
Chopper |
contr. av. |
Controlled avalanche |
CPU |
Central processing unit |
CRT |
Cathode ray tube |
CTV |
Color TV |
Dem |
Demodulator |
Diskr |
Discriminator |
DMA |
Direct memory access controller |
Dual |
Dual transistors for differential amplifiers |
|
or dual diode |
EOutput stages
Equal |
Equalizer |
ESD |
Electrostatic discharge |
FB |
Remote control |
FED |
Field effect diode |
FLT |
Fluorescent tubes |
FM |
RF application (FM range) |
FREDFET |
|
Converter frequency to voltage |
|
gep |
Matched types |
GI |
Rectifier (general) |
Gunn diode |
|
HA |
TV horizontal deflection stages |
HF |
RF application (general) |
High current gain |
|
For high output current |
|
High definition |
|
High output power |
|
High precision |
|
High reliability |
|
High resolution |
|
High speed |
|
For high voltages |
|
Horiz. |
Horizontal |
For high impedance demodulator circuits |
|
Ib |
|
Igt |
Gate trigger current |
Ih |
Holding current |
Impatt diode |
|
Indic. |
Indicator |
IR |
|
Ip |
Peak point current |
IPD |
Intelligent power device |
Is |
Switching current |
Iso |
Insulated |
Itsm |
Surge current |
Iv |
Valley point current |
High voltage rectifier |
LPower stages
LCD |
Liquid crystal display |
LED |
|
Limiter |
Limiter |
Low drive power required |
|
Low voltage drop |
|
LogL |
Logic Level (Uth ≈ 0,8...2V) |
Low power consumption |
|
Low collector - emitter saturation voltage |
|
For low voltages |
MMixer stages
Min |
Miniaturized |
MMU |
Memory management unit |
Multipl |
Frequency multiplier |
NF |
AF applications |
Nix |
Nixie driver (digital display tubes) |
Noise suppr. |
Noise suppression |
For low impedance demodulator circuits |
OOscillator stages
Surface acoustic wave filter |
|
Operational amplifier |
|
OSD |
|
par |
Parallel |
PEP |
Peak envelope power |
PIP |
|
PLL |
|
PQ |
|
progr |
Programmable |
PS |
Power supply |
PWM |
|
ra |
Low noise |
RadH |
Designed for space aviation use (radiation |
|
hardened) |
re |
AGC stages |
Recorder |
Tape and cassette recorder |
Reg |
Regulator |
SSwitching stages
Schottky |
Schottky diode |
ser |
Serial |
SHF |
RF applications (>5 GHz) |
SMD |
Surface mounted device |
SMPS, SN |
|
SS |
Fast switching stages |
SSB |
Single sideband operation |
stack |
Rectifier stacks |
sym |
Symmetrical types |
TAZ |
Suppressor diode |
tgq |
|
Thyristor bridge configuration |
|
Arrangement of numerous thyristors in a |
|
|
single case |
Ton |
TV sound channel |
Tr |
Driver stages |
Tuning |
RF tuning diode |
Tunnel diode |
|
TV |
Television applications |
UART |
Universal asynchronous |
|
receiver/transmitter |
Ub |
Break over voltage |
Ucc, Us |
Supply voltage |
UHF |
RF applications (>250 MHz) |
Uni |
General purpose types |
US |
Ultrasonics |
USART |
Universal synchronous/ |
|
asynchronous receiver/transmitter |
VPre/input stages
VA |
TV vertical deflection types |
VC |
Video recorder |
Vertik. |
Vertical |
VHF |
RF applications (approx. 100...250MHz) |
Vid |
Video output stages |
english
XI
english
VIR |
NTSC color correction |
Vtx |
Video text, teletext |
Converter voltage to frequency |
|
ZF |
IF stages |
ZV |
Integrated trigger amplification (Darlistor) |
ß
(eff) |
r.m.s. value |
(ss)Peak value
(Ta = ...°) |
Ambient temperature if not 25°C |
(Tc =...°) |
Case reference temperature if not 25°C |
|
(power types) |
= [Typ]: |
Identical with [type], however: [data, |
|
case, |
→See under
Only UCE0 known; otherwise |
|
|
always UCB0 or UCB0/UCE0 (transistors) |
...ns |
Reverse recovery time (diodes) |
.../...ns |
|
...μs |
Circuit commutated |
|
tq (thyristor) |
... + Diac |
With integrated diac |
μComp |
Microcomputer |
≈ [Typ] |
Similar to the named type |
|
(description see there) |
Column 4 (“Fig.”)
Related drawing number (figure) and pin assignment (appended letter) with discrete semiconductors. In the pin assignment table, the associated column (“Transistor”, “FET”, “Thyristor”, “Diode”,
Column 5 (“Manufacturer”)
The names of the manufacturers are abbreviated to save space. The complete name of each manufacturer is listed alphabetically on page XXII. We cannot vouch for completeness and availability.
If a number of manufacturers are named for a single type, data is given of only one, due to the data of a single type differing from one manufacturer to another slightly under unlike measurement conditions.
Column 6 (“Comparison types”)
With the details on the alternate types, just a selection of the types “closely related” to the original type is given. They are preferably types which are not too difficult to obtain.
In practice there are usually many more alternate types applicable than there is room for in this table. The characterizing mark “+ +” after the last alternate type is to attract particular attention.
The "parametric search" in the online data base for semiconductor at www.ecadata.de, offering various abilities to find replacement types too. Furthermore you will be able to compare directly the parameters of the different types. Please read page XXIV for the special offer for vrt book users.
The “Selector tables” in the ECA data bases under http:// www.ecadata.de, on DVD or as books conceal unsuspected furthering possibilities. These ECA data sources on DVD or at www.ecadata.de should by all means be consulted for an exact type comparison in critical cases.
If not otherwise mentioned in footnotes, the given alternate types have the same or better electrical data and can be applied without mechanical problems.
The same pin assignment has only been given attention to in the case of power types and ICs, as with small components the connections can be easily exchanged to fit. A check on any differing assignments is very much advised, and with this table is easy to carry out.
When a comparison type is followed by a maker’s name (abbreviated) in square brackets, this means the data stems
from this manufacturer and has not been verified by the author. In order not to exceed the capacity of this table, the detailed ECA data bases online or on DVD have partly had to be referred to. The incredible variety of the components and comparison possibilities cannot be fully shown in this scope with digital logic circuits, voltage stabilizers,
Footnote list on the comparison type with comparison types in brackets ( ):
1with integrated damper diode
2damper diode between emitter and collector necessary externally
3not insulated case
4different case - possibly mechanical
adaption necessary
5the differing pin assignment possibly requires different assembly
6alternate type is a little larger or with a different
7alternate type with lower maximum ratings
8 lower transition frequency (fT)
9 also with other gate trigger current
10alternate IC is not
11also with other gate trigger current and the
alternate type is with different case
13lower forward current gain (B, hFE, ß, hfe)
15No. 1 + 5
16equivalent type with limited temperature range
17higher saturation voltage (UCESat)
18 suitable resistor required externally
+ + Many further comparison possibilities
Column 7 (“ECA Infos”)
Further informations about this type like particularized data (data), original data sheets (pdf) or pinout (pinout) you will find in the ECA online data base for semiconductors at http://www.ecadata.de.
Please visit also our main page site http://www.eca.de for additional informations about our online data base.
In all critical application cases the relevant parameters of the comparison types are to be compared with those of the original in order to prevent any “surprises”!
Despite very careful research, errors excepted. There is no liability for failure in practice.
XII
Indications importantes pour I’utilisation
Le tableau suivant énumére par ordre alphabétique les principaux composants de
àchaque nouvelle édition. Les composants vieillis ne sont jamais effacés. Les tableaux plus anciens peuvent ainsi être mis hors d’usage (puisque les pertes d’informations sont exclues), ce qui évite de rerdre un temps précieux en effectuant des recherches dans plusieurs tableaux.
Colonne 1 («Type»)
Les références des composants sont identiques à celles se trouvant dans la documentation du fabricant. Elles sont parfois indiquées différemment ou en abrégé sur les composants mêmes.
Lorsque plusieurs composants du même type ont la même référence («BF 232» par exemple), la désignation abrégée du fabricant entre crochets «[...]» suit. Les repéres de sélection indiqués par les lettres ou les chiffres n’ont été
mentionnés que lorsque cela s’est avéré important dans la pratique ou pour les équivalents.
Colonne 2 («Genre»)
Courte définition du composant de
Abréviations utilisées:
convertisseur |
|
circuit intégré (bipolaire, + technologie MOS) |
|
circuit intégré à accouplement de charge |
|
circuit logique numérique (technologie CMOS) |
|
diode à capacité variable |
|
Diac |
diode de déclenchement à 3 couches, |
|
symétrique |
circuit intégré numérique |
|
DOC |
double optocoupleur |
DPI |
double interrupteur optique |
mémoire à |
|
convertisseur |
|
mémoire, non volatile, altérable |
|
circuit de logique couplé à I’émetteur |
|
mémoire, non volatile, effaçable par |
|
|
électricité |
mémoire, non volatile effaçable par U.V. |
|
ER |
émetteurs récepteurs |
PAL, réseau logique programmable par |
|
|
I’utilisateur |
FIB IR LD |
Infrared laser diode for fibre optics |
FIB IR LD+MA |
Infrared laser diode with monitor output for |
|
fibre optics |
FIB IR LD+MD |
Infrared laser diode with monitor diode for |
|
Fibre optics |
FIB IR LD+MO |
Infrared laser diode with modulator for fibre |
|
optics |
FIB IR LD+NT |
Infrared laser diode with NTC Resistor for fibre |
|
optics |
thyristor de fréquence |
|
GaAs |
arséniure de gallium |
diode au germanium |
|
transistor NPN au germanium |
|
transistor PNP au germanium |
|
thyristor débranchable (gate turn off) |
|
circuit intégré (technologie hybride) |
|
IC |
circuit intégré |
IR LD |
Infrared laser diode |
IR LD+MA |
Infrared laser diode with monitor output |
IR LD+MD |
Infrared laser diode with monitor diode |
IRED |
Infrared light emitting diode |
IRED+MD |
Light emitting diode |
circuit intégré |
|
|
ordinateur |
comparateur (amplificateur opérationnel) |
|
LD |
Laser diode |
LDR |
Photo Resistor |
LED |
Light emitting diode |
LED/IRED |
Light emitting diode and infrared |
|
diode |
circuit intégré linéaire |
|
avec diode de protection grille intégrée |
|
FET à oxyde métallique, type de déplétion |
|
FET à oxyde métallique, type |
|
d’enrichissement |
circuit intégré (technologie MOS) |
|
transistor bipolaire |
|
MP |
paire d'émetteurs récepteurs |
circuit intégré MOS à canal N |
|
canal N transistor à effet de champ |
|
OC |
optocoupleur |
Opto |
composants |
amplificateurs d’opération |
|
CI PAL réseau logique programmable |
|
PC |
Photo Element |
PD |
Photo Diode (for OPICs with Integrated |
|
Linear Amplifier) |
PD ARRAY |
Photo Diode array |
PI |
interrupteur optique |
diode PIN |
|
PIN PD |
PIN Photodiode (for OPICs with Integrated |
|
Linear Amplifier) |
circuit intégré MOS à canal P |
|
ROM programmable à I’électricité |
|
PUT |
transistor |
PS |
photocapteur d'réflexion |
PT |
Photo Transistor |
PTR |
Photo Triac |
PYRODET |
Pyrodetector (Infrared Sensor) |
canal P transistor à effet de champ |
|
QOC |
quadruple optocoupleur |
RCLED |
Resonant cavity LED |
RED LD |
Red laser diode |
RED LD+MD |
Red laser diode with monitoring diode |
diode de tension de référence (diode de |
|
|
Zener haute constance) |
mémoire des constantes |
|
SAS |
interrupteur asymétrique au silicium |
SBS |
interrupteur bilatéral au silicium |
diode au sélénium |
|
silicium redresseur à pont |
|
diode au silicium |
|
transistor silicium NPN |
|
transistor Darlington de silicium NPN |
|
transistor silicium PNP |
|
transistor Darlington de silicium PNP |
|
diode rég. de tension au silicium |
|
|
(fonct. en sens direct) |
mémoire à lecture - écriture, statique |
|
SUS |
interrupteur unilatéral au silicium |
Tetrode |
P- + |
Thermistor |
résistance dépendant de température |
Thy |
thyristor |
thyristor à pont |
|
TOC |
triple optocoupleur |
Triac |
thyristor |
diode de déclenchement à 4 couches, |
|
|
asymétrique |
circuit intégré linéaire (technologie TTL) |
|
circuit logique numérique |
|
|
(transistor - logique de trans.) |
UJT |
transistor unijonction |
Varistor |
résistance dépendant de tension (VDR) |
français
XIII
français
diode de Zener (fonctionnement en sens |
|
|
d’état bloqué) |
régulateur de tension, stabilisateur de |
|
|
tension |
...+Di |
avec diode d’amortissement intégrée |
...+R |
avec résistances intégrée |
thyristor pour application secteur |
|
microprocesseur, CPU (MOS) |
Colonne 3 («Description succ.»)
Caractéristiques abrégées et descriptif des fonctions des composants.
Abréviations utilisées:
Aamplificateurs d’antenne et à large bande
AFC |
correction automatique de fréquence |
AFT |
accord précis automatique |
AGC |
réglage automatique de gain |
ALC |
modulation automatique |
AM |
application HF (gamme AM) |
APC |
déphasage automatique |
ARI |
système d’information autoradio (RFA) |
Array |
disposition de plusieurs éléments dans |
|
un boîtier |
asym |
asymétrique |
AV |
Audio/Vidéo |
amplificateur de lecture/enregistrement |
|
B |
amplification de courant continu |
Backward |
diode unitunnel |
diode de commutation HF |
|
bidirektional |
tête bèche |
Br |
redresseur à pont |
Btx |
vidéotex |
Camera |
caméra vidéo |
CATV |
|
CB |
radio CB |
CD |
lecteur de disques compacts |
Chopper |
chopper de mesure |
contr. av. |
avalanche contrôlée |
CPU |
unité centrale de traitement |
CRT |
terminal de visualisation à écran |
|
cathodique |
CTV |
application télévision en couleurs |
Dem |
démodulateur |
Diskr |
discriminateur |
DMA |
contrôleur mémoire accès direct |
Dual |
trans. doubles pour amplific. de différence |
|
ou |
E |
étages finaux |
Equal |
correcteur |
ESD |
décharge électrostatique |
FB |
commande à distance |
FED |
diode à effet de champ |
CI mémoire FIFO (premier entré, premier |
|
|
sorti) |
FLT |
tubes afficheurs |
FM |
application HF (gamme OUC) |
FREDFET |
|
convertisseur fréquence - tension |
|
gep |
types appariés |
GI |
redresseur (en général) |
diode Gunn |
|
HA |
étages à déflection horizontale télévision |
HF |
application HF (en général) |
amplification de courant élevée |
|
pour courant de sortie élevée |
|
haute définition |
|
puissance de sortie élevée |
|
haute précision |
|
fiabilité accrue |
|
haute résolution |
|
rapide |
|
pour tensions élevées |
|
Horiz. |
horizontal |
démodulateur à haute impédance |
|
Ib |
courant de rupture |
Igt |
courant d’amorçage |
Ih |
courant de maintien |
diode Impatt |
|
Indic. |
indication |
Ip |
courant de pointe |
IPD |
device de puissance intelligent |
IR |
infrarouge |
Is |
courant de commande |
Iso |
isolé |
Itsm |
courant de choc |
Iv |
courant de bas niveau |
redresseur très haute tension |
Létages de puissance
LCD |
indication à cristaux liquides |
LED |
voyant lumineux à diode |
CI mémoire LIFO (dernier entré, premier |
|
|
sorti) |
Limiter |
limiteur |
pour faibles drive de puissance |
|
faible perte de tension |
|
LogL |
Logic Level (Uth ≈ 0,8...2V) |
faible consommation de puissance |
|
basse tension de saturation |
|
|
collecteur - émetteur |
pour faibles tensions |
Métages mélangeurs
Min |
modéles type miniature |
MMU |
unité de gestion mémorie |
Multipl |
multiplicateur de fréquence |
NF |
application AF |
Nix |
driver type nixie (tubes afficheurs) |
Noise suppr. |
suppression de parasites |
démodulateur de basse impédance |
Oétages d’oscillateur
amplificateur opérationnel |
|
OSD |
affichage de film écran |
par |
parallèle |
PEP |
puissance de sortie de pointe |
PIP |
image dans image |
PLL |
boucle à verrouillage de phase |
PQ |
puissance de sortie HF (transistors |
|
émetteurs) |
prog |
programmable |
PS |
alimentation électrique |
PWM |
modulation de largeur d’impulsion |
ra |
à faible bruit |
RadH |
étudié pour les applications aérospatiales |
re |
étages de réglage (réglage automatique |
|
de gain/AGC) |
Recorder |
magnétophones et appareils à cassettes |
Reg |
régulateur |
Sétages de commutation
Schottky |
diode Schottky |
ser |
sériel |
SHF |
applications HF (>5 GHz) |
SMD |
pour montage en surface |
SMPS, SN |
alimentation à découpage |
SS |
étages de commutation rapide |
SSB |
opération à bande latérale unique |
stack |
montages à diodes |
sym |
types symétriques |
TAZ |
diode Zener fortes surcharges |
tgq |
temps d’effacement |
thyristor à pont |
|
module thyristor (plusieurs éléments dans |
|
|
un boîtier) |
Ton |
canal son TV |
Tr |
étages driver |
diode de déclenchement à 4 couches, |
|
|
asymétrique |
Tuning |
diode de réglage HF |
XIV
diode à effet de tunnel |
|
TV |
applications de télévision |
UART |
emetteur/récepteur universel asynchrone |
Ub |
tension de retournement |
Ucc, Us |
tension d’alimentation |
UHF |
application HF (>250 MHz) |
Uni |
types universels |
US |
|
USART |
emetteur/récepteur universel |
|
synchrone/asynchrone |
Vétages d’entrée
VA |
étages de déflection verticale TV |
VC |
enregistreur vidéo |
Vertik. |
vertical |
VHF |
application HF (env. 100...250 MHz) |
Vid |
étages finaux vidéo |
VIR |
correction des couleurs NTSC |
Vtx |
vidéotexte, télétexte |
convertisseur tension - fréquence |
|
protection contre les rayons X |
|
ZF |
étages FI |
ZV |
avec renforcement d’amorçage (darlistor) |
ßamplification de courant (transistor) pour 1 kHz
(eff) |
valeur effective ( = RMS) |
(ss)valeur de créte
(Ta = ...°) |
température ambiante, lorsqu’elle diffère |
|
de 25°C(composants en saillie) |
(Tc =...°) |
température de référence du boîtier, lorsqu’elle |
|
diffère de 25°C (composants de puissance) |
= [Typ]: |
identique à [type], toutefois: |
|
[caract., fig., |
→renvoi (regarder sous ...)
seul UCE0 est connu; sinon, toujours |
|
|
UCB0 ou UCB0/UCE0 (transistors) |
...ns |
temps de recouvrement inverse (diode) |
temps d’etablissement (transistors) |
|
.../...ns |
temps d’etablissement/de coupure (transistors) |
,..μs |
temps de recouvrement (thyristor) |
...+Diac |
avec diac intégrée |
μComp |
|
≈ [Typ] |
analogueau composant cité |
|
(description, voir composant cité) |
Colonne 4 («Fig.»)
Indication du numéro de la figure (chiffre) et de la connexion (lettre). Veuillez consulter la colonne correspondante («transistor», «FET», «thyristor», «diode»,
Le signe degré (°) signifie: boîtier avec dissipateur de chaleur supplémentaire.
Colonne 5 («Fabricants»)
Par faute de place, les désignations fournisseur seront indiqués sous une form raccourcie. La liste des noms complets apparaîtront, par ordre alphabétique, sur la page XXII. Sous réserve de garantie concernant l’intégralité et possibilité de fourniture. Dans le cas où plusieurs fournisseurs seront nommés pour un type déterminé, la publication ne concerne qu’un seul étant donné que les données d’un type diffèrent selon le fournisseur et les conditions de mesure différentes.
Colonne 6 («Types d’equivalence»)
Les indications concernant les composants de rechange constituent un choix d’éléments analogues au composant original. II s’agit en règle générale de composants relativement faciles à obtenir.
En pratique, les composants de rechange pouvant être utilisés sont souvent beaucoup plus nombreux que ceux qui ont pu trouver place dans ce tableau. Le double astérisque « + + » noté après le dernier composant de rechange a pour but d’attirer I’attention sur ce dernier point.
Les tables «Selector» se trouvant dans les brochures de
caractéristiques et les DVD ECA et http://www.ecadata.de contiennent un grand nombre de possibilités autres que celles contenues dans ce tableau. En outre, ces brochures de caractéristiques ECA sont à conseiller pour une comparaison exacte des composants en cas de doute.
Les composants de rechange indiqués sans note renvoient
àdes éléments présentant des caractéristiques électriques semblables ou meilleures et pouvant être insérés sans problèmes mécaniques.
Nous n’avons accordé d’importance à une connexion, identique que pour les composants de puissance et les circuits intégrés (IC), les sorties des petits composants pouvant être aisément échangées.
II est fortement recommandé de vérifier si I’agencement est identique, vérification qui peut être facilement effectuée à I’aide de ce tableau. Dans le cas où un type d’équivalence est suivi d’un nom de fabricant (en abrégé) entre crochets, cette indication provient du fabricant et n’a pas été vérifiée par I’auteur!
Pour ne pas dépasser le cadre de ce tableau, il s’est parfois avéré nécessaire de renvoyer aux brochures de caractéristiques détaillées ECA. Les circuits logiques numériques, régulateurs de tension, diodes de Zener, thyristors et amplificateurs opérationnels présentent une telle diversité de formes et d’éléments équivalents qu’il était impossible de les présenter de manière exhaustive dans le cadre de ce tableau.
Liste des notes affectées aux composants de rechange pour les composants de rechange entre parenthèses ( ):
1avec diode d’amortissement intégrée
2 diode d’amortissement externe entre émetteur et collecteur nécessaire
3 boîtier non isolé
4 boîtier différent. Adaptation mécanique éventuellement requise
5 connexion différente, nécessite éventuellement un montage différent
6 le composant de rechange est un peu plus grand ou a une dimension de trame différente
7 composant de rechange dont les valeurs limites sont plus faibles
8 fréquence limite plus basse (fT)
9 ce type peut être également obtenu avec d’autres caractéristiques d’allumage
10le circuit intégré (IC) de rechange n’est pas compatible avec la broche ou a une dimension de trame différente.
11ce type peut être également obtenu avec d’autres caractéristiques d’allumage et le type équivalent
a un autre boîtier.
13amplification de courant plus basse (B, hFE, ß, hfe)
15No. 1 + 5
16type d’équivalence avec gamme de température limitée.
17tension de saturation plus haute (UCESat)
18résistance externe correspondante nécessaire
++ nombreux composants équivalents
Colonne 7
Nom du volume ECA dans lequel les caractéristiques exactes du composant recherché ainsi que d’autres composants équivalents sont répertoriés. Afin d’éviter les «surprises», il est recommandé de comparer les principaux paramètres des composants équivalents à ceux de I’original en cas de doute quant à I’utilisation. http://www.ecadata.de
Les soins apportés dans les recherches ne peuvent exclure entièrement les erreurs. Nous ne pouvons être tenus responsables des dommages consécutifs occasionnés dans la pratique.
français
XV
italiano
Avvertenze importanti per I’uso
Nella seguente parte di tabelle vengono riportati i più importanti elementi di costruzione di semiconduttori, indipendentemente se si tratta di transistori, diodi, tiristori, circuiti integrati ecc. I singoli tipi sono provvisti dei brevi dati più rilevanti e in quanto possibile e conveniente vengono indicati anche i tipi comparativi appropriati. Questa tabella viene integrata ed ampliata con ogni nuova edizione. I tipi vecchi non vengono mai cancellati. Tabelle vecchie pertanto dovranno essere sempre messe da parte (una conseguente perdita di informazioni è impossibile!), per evitare la perdita di tempo prezioso nel dover cercare tra numerose tabelle.
Colonna 1 («Tipo»)
Le denominazioni di tipo corrispondono a quelle delle rispettive documentazioni dei produttori. Sono a volte applicate a timbro in modo variato o abbreviato sugli elementi di costruzione stessi. In caso di più denominazioni di tipi identici di una specie di elementi costruttivi (ad esempio «BF 232») la denominazione in breve del produttore è aggiunta tra parentesi angolare «[...]» alla denominazione del tipo. Contrassegni selettivi per mezzo di lettere o cifre introdotte saranno tenuti in considerazione solo se ciò sia importante nella pratica e
al paragone dei tipi. |
|
|
|
Colonna 2 («Specie») |
Transistore bipolare |
||
|
|
||
Definizione in breve dell’elemento costruttivo a semiconduttore. |
MP |
Trovato emettitore / rivelatore |
|
Abbreviazioni usate: |
Canale |
||
Convertitore |
Canale N transistore ad effetto di campo |
||
Circuito integrato (bipolare, + tecnologia |
OC |
Photocoupler |
|
|
MOS) |
Opto |
Componenti |
Dispositivo per accoppiamento di carica |
Amplificatori operazionali |
||
Circuito digitale logico (tecnologia CMOS) |
Array logica, programmabile |
||
Diodo di capacità |
PC |
Foto Elemento |
|
Diac |
Diodo Trigger a 3 strati, simmetrico |
PD |
Diodo della foto (per OPICs con l'amplificatore |
Circuito integrato digitale |
|
lineare integrato) |
|
DOC |
doppio canale photocoupler |
PD ARRAY |
Diodo della foto array |
DPI |
doppio canale foto interruttore |
PI |
Interruttore della foto |
Memoria di |
Diodo PIN |
||
Convertitore |
PIN PD |
Fotodiodo di PIN (per OPICs con l'amplificatore |
|
Memoria, non transitoria, variabile |
|
lineare integrato) |
|
Logica con accoppiamento in emettitore |
Canale |
||
Memoria, non transitoria, cancellabile |
ROM elettricamente programmabile |
||
|
elettricamente |
PS |
Sensore riflettente della foto |
Memoria, non transitoria, cancellabile a |
PT |
Transistore della foto |
|
|
UV |
PTR |
Triac della foto |
ER |
Emettitore / rivelatore |
PUT |
Transistore monogiunzionale (UJT) |
Tiristore di frequenza |
|
programmabile |
|
FIB IR LD |
Diodo laser infrarossi per fibre ottiche |
PYRODET |
Pyrodetector (sensore infrarosso) |
FIB IR LD+MA |
Diodo laser a infrarossi con monitor per la |
Canale P transistore ad effetto di campo |
|
|
produzione di fibre ottiche |
QOC |
Fotoisolatore della scanalatura del quadrato |
FIB IR LD+MD |
Diodo laser a infrarossi con monitor diodo |
RCLED |
Cavità sonora LED |
|
per fibra ottica |
RED LD |
Diodo laser rosso |
FIB IR LD+MO |
Diodo laser a infrarossi con modulatore per |
RED LD+MD |
Diodo laser rosso con monitor diodo |
|
fibre ottiche |
Diodo di riferimento (diodo Z altamente |
|
FIB IR LD+NT |
Diodo laser a infrarossi con NTC Resistenza |
|
costante) |
|
di fibre ottiche |
Memoria di sola lettura |
|
PAL, programmabile a campo |
SAS |
Switch assimetrico al silicio |
|
GaAs |
Arsenide di gallio |
SBS |
Switch bilaterale al silicio |
Diodo a germanio |
Diodo selenio |
||
Transistore a germanio NPN |
Silicio raddrizzatore a ponte |
||
Transistore a germanio PNP |
Diodo silicio |
||
Tiristore disinseribile (gate turn off) |
Transistore silicio NPN |
||
Circuito integrato (tecnologia ibrida) |
Transistore Darlington di silicio NPN |
||
IC |
Circuito integrato |
Transistore silicio PNP |
|
IR LD |
Diodo laser infrarossi |
Transistore Darlington di silicio PNP |
|
IR LD+MA |
Diodo laser a infrarossi con uscita monitor |
Diodo stabi (stabilizzatore) |
|
IR LD+MD |
Diodo laser a infrarossi con monitor diodo |
|
(funzionamento in direzione di flusso) |
IRED |
Diodi emettitori di luce a infrarossi |
Memoria di |
|
IRED+MD |
Diodo luminescente con monitor diodo |
SUS |
Switch unilaterale al silicio |
Tetrode |
P- + |
||
Comparatore (amplificatore |
Thermistor |
Resistenza dipendente di temperatura |
|
|
operazionale) |
Thy |
Tiristore |
LD |
Diodo laser |
Collegamento a ponte a tiristore |
|
LDR |
Foto Resistenza |
TOC |
Fotoisolatore triplice della scanalatura |
LED |
Diodo luminescente |
Triac |
Tiristore a onda intera |
LED/IRED |
Diodo luminescente e Diodi emettitori di |
Diodo eccitatore (trigger) a 4 strati, |
|
|
luce a infrarossi |
|
asimmetrico |
Circuito integrato lineare |
Circuito lineare integrato (tecnologia TTL) |
||
Con diodo di protezione integrato Gate |
Circuito digitale logico (logica transistore |
||
|
- transistore) |
||
|
(depletion) |
UJT |
Transistore unijunction |
|
(monogiunzionale) |
||
|
(enhancement) |
Varistor |
Resistenza dipendente di tensione (VDR) |
Circuito integrato (tecnologia MOS) |
Diodo Z (funzionamento in senso di non- |
||
|
|
|
conduzione) |
XVI
Regolatore di tensione, stabilizzatore di |
|
|
tensione |
...+Di |
Con diodo damper integrato |
...+R |
Con resistenze integrate |
Tiristore di rete |
|
Microcomputer ad un chip (MOS) |
|
Microprocessore, CPU (MOS) |
Colonna 3 («Descrizione somm.»)
Dati in breve ossia descrizione di funzionamento relativo al tipo.
Abbreviazioni usate:
AAmplificatore di antenna e a banda larga
AFC |
Correzione di frequenza automatica |
AFT |
Sintonizzazione automatica di precisione |
AGC |
Generazione tensione di regolazione |
ALC |
Modulazione automatica |
AM |
Applicazione alta frequenza (campo AM) |
APC |
Regolazione automatica delle fasi |
ARI |
Sistema informativo autoradio (RFT) |
Array |
Disposizione di più elementi in un |
|
involucro |
asym |
Asimmetrico |
AV |
Audio/Video |
Amplificatore di registrazione/ |
|
|
trasmissione |
BAmplificazione a corrente continua
Backward |
Diodo backward |
Commutazione bande ad alta frequenza |
|
bidirektional |
Diodo a graffa |
Br |
Raddrizzatore a ponte |
Btx |
Videotesto |
Camera |
Videocamera |
CATV |
Amplificatore a cavo multigamma |
CB |
Radio banda J |
CD |
Giradischi CD |
Chopper |
Interruttore rotante |
contr. av. |
Resistente alla tensione impulsiva |
|
(controlled avalanche) |
CPU |
Unità centrale computer |
CRT |
Schermo |
CTV |
Applicazione TV a colori |
Dem |
Demodulatore |
Diskr |
Discriminatore |
DMA |
Controller accesso diretto memoria |
Dual |
Transistori doppi amplificatori differenziali |
|
o diodo doppio |
EStadi finali
Equal |
Equalizzatore |
ESD |
Scarica elettrostatica |
FB |
Telecomando |
FED |
Diodo ad effetto di campo |
Memoria silo |
|
FLT |
Tubi indicatori cifre |
FM |
Applicazione alta frequenza (campo onde |
|
ultracorte) |
FREDFET |
|
|
rapido |
Convertitore frequenza/tensione |
|
gep |
Tipi appaiati |
GI |
Raddrizzatori, in genere |
Diodo Gunn |
|
HA |
Stadi di deflessione orizzontale TV |
HF |
Applicazione alta frequenza (generale) |
Alta amplificazione di corrente |
|
Per alta corrente d’uscita |
|
Alta definizione |
|
Alta potenza d’uscita |
|
Alta precisione |
|
Affidabilità elevata |
|
Alta risoluzione |
|
Rapido |
|
Per alte tensioni |
|
Horiz. |
Orizzontale |
Per circuiti di demodulazione ad alta |
|
|
impedenza |
Ib |
Corrente di rottura |
Igt |
Corrente d’innesco superiore |
Ih |
Corrente di mantenimento |
Diodo Impatt |
|
Indic. |
Indicazione |
Ip |
Corrente di punto di picco |
IPD |
Attrezzo di potenza intelligente |
IR |
Infrarosso |
Itsm |
Max. corrente d’urto ammissibile |
Is |
Corrente di commutazione |
Iso |
Isolato |
Iv |
Corrente di punto di valle |
Raddrizzatore d’alta tensione |
LStadi di potenza
LCD |
Indicatore a cristalli liquidi |
LED |
Indicatore a diodi luminosi |
Memoria cantina |
|
Limiter |
Limitatore |
Per basse potenza di volante |
|
Modesta perdita di tensione |
|
LogL |
Logic Level (Uth » 0,8...2V) |
Modesto consumo di potenza |
|
Bassa tensione di saturazione collettore |
|
|
- emitter |
Per basse tensioni |
MStadi di messaggio
Min |
Esecuzione in miniatura |
MMU |
Unità d’amministrazione memoria |
Multipl |
Moltiplicatore di frequenza |
NF |
Applicazioni bassa frequenza |
Nix |
|
Noise suppr. |
Soppressione disturbi |
Per circuiti di demodulazione a bassa |
|
|
impedenza |
OStadi di oscillatore
Amplificatore operazionale |
|
OSD |
Avviso di schermo |
par |
Parallelo |
PEP |
Potenza massima di uscita |
PIP |
Figura in figura |
progr |
Programmabile |
PLL |
Inserimento in fase rigida |
PQ |
Potenza di uscita HF (transistori |
|
trasmettitori) |
PS |
Alimentazione di corrente |
PWM |
Modulazione larghezza dell’impulso |
ra |
Silenzioso |
RadH |
Resistente alla radiazione, concepito per |
|
usi spaziali |
re |
Stadi regolatori (AGC) |
Recorder |
Registratore a nastro e a cassette |
Reg |
Regolatore |
SStadi di rottura
Schottky |
Diodo Schottky |
ser |
Seriale |
SHF |
Applicazioni HF (>5 GHz) |
SMD |
Per montaggio sulla superficie |
SMPS, SN |
Parti del circuito combinatorio a cadenza |
SS |
Stadi di rottura rapidi |
SSB |
Azionamento a banda unilate rale |
stack |
Raddrizzatore a più strati, serie |
|
raddrizzatori |
sym |
Tipi simmetrici |
TAZ |
Soppressori di sovratensioni |
tgq |
Tempo d’interdizione |
Ponte di tiristori |
|
Modulo a tiristore (più elementi in un involucro) |
|
Ton |
Canale del suono TV |
Tr |
Stadi di eccitazione |
Diodo eccitatore (trigger) a 4 strati, |
|
|
asimmetrico |
italiano
XVII
italiano
Tuning |
Diodo sintonizzatore ad alta frequenza |
Diodo Tunnel |
|
TV |
Applicazione TV |
UART |
Trasmettitore/ricevitore universale asincrono |
Ub |
Tensione diretta di rottura |
Ucc US |
Tensione di alimentazione |
UHF |
Applicazioni a frequenza ultraelevata |
|
(>250 MHz) |
Uni |
Tipi universali |
US |
Ultrasuono |
USART |
Trasmettitore/ricevitore universale |
|
sincrono/asincrono |
VPrestadi e stadi entrata
VA |
Stadi di deflessione verticale (TV) |
VC |
Registrazione video |
Vertik. |
Verticale |
VHF |
Applicazioni frequenza altissima |
|
(ca. 100...250 MHz) |
Vid |
Stadi finali video |
VIR |
Correzioni colori NTSC |
Vtx |
Videotesto, teletesto |
Convertitore tensione/frequenza |
|
Protezione contro i raggi X |
|
ZF |
Stadi di frequenza intermedia |
ZV |
Con intensificazione dell’accensione |
|
(darlistor) |
ßAmplificazione corrente fino a 1 kHz
(eff) |
Valore effettivo ( = RMS) |
(ss)Valore di punta
(Ta = ...°) |
Temperatura ambientale qualora non |
|
25°C (tipi cantilever) |
(Tc = ...°) |
Temperatura di riferimento carcassa, |
|
qualora non 25°C (tipi di potenza) |
= [Typ]: |
Identico con [Tipo], tuttavia: |
|
[dati, Fig., codice pin, ecc.] |
®Rimando (vedasi sotto ...)
Noto solo UCE0; altrimenti sempre UCB0 |
||
|
oppure UCB0/UCE0 (transistori) |
|
...ns |
Tempo di ricupero di ritorno |
(diodi) |
Tempo inserzione (transistori) |
|
|
.../...ns |
Tempo inserzione/interruzione |
|
|
(transistori) |
|
...μs |
Tempo di disinnesco (tiristore) |
|
... + Diac |
Con diac integrato |
|
μComp |
Microcomputer |
|
» [Typ] |
Simile al tipo indicato (vedasi relativa |
|
|
descrizione) |
|
Colonna 4 («Fig.»)
Indicazione del numero della figura (cifra) e dell’occupazione pin (lettera inserita) a semiconduttori discreti. Nella tabella di occupazione pin dev’essere osservata la competente colonna («transistore», «FET», «tiristore», «diodo»,
èprevisto solo un disegno di principio senza occupazione pin. Tutti i disegni si trovano in calce alla tabella. II segno di grado (°) significa: carcassa con supplementare lamiera di raffreddamento o corpo di raffreddamento.
Colonna 5 («Produttori»)
I nomi dei produttori sono stati abbreviati per ragione di spazio. Nomi completi si trovano raggruppati in ordine alfabetico a pagina XXII. Non può essere assunto alcuna garanzia per completezza e disponibilità.
Ove vengono indicati più fabbricanti per uno stesso tipo allora soltanti i dati di uno solo sono stati utilizzati, giacchè in caso di condizioni di misurazione differenti i dati un tipo variano leggermente da fabbricante a fabbricante.
Colonna 6 («Tipi corrispondenti»)
Nell’indicazione dei tipi di ricambio viene indicata solo una scelta di «parenti stretti» del tipo originale. Si tratta in prevalenza di tipi non difficilmente reperibili.
In pratica spesso è impiegabile un numero assai maggiore di tipi di ricambio di quanto si potevano piazzare nella tabella. II
contrassegno « + + » dopo I’ultimo tipo di ricambio dovrà sottolineare in particolar modo questo fatto.
Il "search parametrico" nella base di dati in linea per il semiconduttore a www.ecadata.de, capacità varie d'offerta di trovare i tipi del rimontaggio anche. Ancora potrete confrontare direttamente i parametri dei tipi differenti. Legga prego la pagina XXIV per l'offerta speciale per gli utenti del libro del vrt.
Le tavole «Selector» nei registri dei dati ECA contengono non immaginate ulteriori possibilità. Di questi registri di dati ECA ci si dovrà servire in ogni modo per un esatto paragone dei tipi in casi critici.
Se non contrassegnati da note in calce, i tipi di ricambio indicati presentano dati elettrici identici o migliori e sono impiegabili senza problemi meccanici.
Di un’identica occupazione pin si è tenuto conto solo presso tipi di potenza e ICs poiche presso piccole forme di costruzione gli attacchi possono essere scambiati in modo facilmente adattato. Un ulteriore controllo in merito ad una differente occupazione è urgentemente consigliabile e facilmente da realizzare per mezzo di questa tabella.
Se un tipo di confronto è seguito da un nome di fabbricante (abbreviato) tra parentesi quadre, I’indicazione proviene da questo fabbricante e non è stata verificata dall’autore (!).
Per non superare I’ambito di questa tabella si doveva in parte far riferimento ai dettagliati registri di dati ECA. L’immensa foltità delle forme costruttive e delle possibilità di paragone non può venir rappresentata in modo esauriente per circuiti logici, digitali, regolatori di tensione, diodi Z, tiristori ed amplificatori operazionali.
Elenco delle note in calce presso tipi corrispondenti tra parentesi ( ):
1Con diodo damper integrato
2Diodo damper tra emettitore e collettore esternamente necessario
3Carcassa non isolata
4Altra carcassa - eventualmente necessario un adattamento meccanico
5L’occupazione pin inuguale richiede eventualmente un altro montaggio
6II tipo di ricambio è alquanto più grosso o con altra misura modulare.
7Tipo di ricambio con dati limiti più deboli
8 Frequenza limite più bassa (fT)
9 II tipo è ottenibile anche con altri dati di accensione
10IC di ricambio non è compatibile con pin o con altra misura modulare
11II tipo è ottenibile anche con altri dati di accensione e il tipo di ricambio possiede un’altra
carcassa.
13Amplificazione di corrente meno forte (B, hFE, ß, hfe)
15No. 1 + 5
16Tipo di sostituzione con gamma di temperatura limitata.
17Tensione di saturazione più alta (UCESat)
18È necessaria esternamente una resistenza adeguata
+ + Numerose altre possibilità di paragone
Colonna 7 («
Nome del volume ECA nel quale si possono trovare dati esatti e ulteriori paragoni per il tipo ricercato. In tutti i casi d’impiego critici si dovranno paragonare i parametri rilevanti dei tipi di paragone con quelli dell’originale per prevenire alle «sorprese»! http://www.ecadata.de/
Malgrado le scrupolose ricerche, rimangono comunque riservati eventuali errori. Non si possono rispondere di danni verificatisi in pratica.
XVIII
Notas importantes para el uso
En las tablas de la sección siguiente se indican los componentes electrónicos más importantes en orden estrictamente alfabético, independientemente de que se trate de transistores, diodos, tiristores o de circuitos integrados, etc. Junto a los diferentes componentes se indican brevemente los datos característicos más relevantes y, de ser posible y de interés, los modelos de repuesto adecuados. La presente tabla se actualiza y amplia en cada nueva edición. De ella jamás se borran los modelos antiguos. (De este modo queda descartada cualquier pérdida de información). Por ello deberían retirarse de la circulación las tablas antiguas, a fin de no perder un tiempo valioso consultando varias tablas.
Columna 1 («Tipo»)
Los códigos de los diferentes modelos de componentes corresponden a los de las documentaciones de los respectivos fabricantes. EI código impreso sobre el componente puede diferir o estar abreviado en algunos casos. Cuando varios componentes del mismo tipo tienen el mismo código (por ejemplo «BF 232») se añadido la abreviatura del fabricante encerrada en corchetes «[...]».
La caracterización de componentes seleccionados mediante letras o cifras pospuestas al código sólo se ha tenido en cuenta cuando reviste importancia en la práctica o al comparar diversos modelos o variantes.
Columna 2
Definición breve del tipo de componente semiconductor.
Abreviaturas empleadas:
Convertidor |
|
Circuito integrado (bipolar, + tecnología |
|
|
MOS) |
Dispositivo por acoplamiento de carga |
|
Circuito lógico digital (tecnología CMOS) |
|
Varicap (diodo capacitivo) |
|
Diac |
Diac (diodo trigger simétrico de 3 capas) |
Circuito integrado digital |
|
DOC |
Photocoupler en doble canal |
DPI |
Interruptor en doble canal de la foto |
Memoria de lectura y escritura (RAM) |
|
|
dinámica |
Convertidor |
|
Memoria no volátil de contenido variable |
|
Lógica de emisor acoplado |
|
Memoria no volátil de borrado eléctrico |
|
Memoria no volátil de borrado por |
|
|
ultravioleta |
ER |
Emisor/detector |
FIB IR LD |
Diodo láser infrarrojo para la fibra óptica |
FIB IR LD+MA |
Diodo láser infrarrojo con el monitor hizo |
|
salir para la fibra óptica |
FIB IR LD+MD |
Diodo láser infrarrojo con el diodo del monitor |
|
para la fibra óptica |
FIB IR LD+MO |
Diodo láser infrarrojo con el modulador para |
|
la fibra óptica |
FIB IR LD+NT |
Diodo láser infrarrojo con el resistor de NTC |
|
para la fibra óptica |
PAL, programable por zonas |
|
Tiristor de frecuencia |
|
GaAs |
Arseniuro de galio |
Diodo de germanio |
|
Transistor NPN de germanio |
|
Transistor PNP de germanio |
|
Tiristor desconectable (gate turn off) |
|
Circuito integrado de tecnología híbrida |
|
IC |
Circuito integrado |
IR LD |
Diodo láser infrarrojo |
IR LD+MA |
Diodo láser infrarrojo con salida del monitor |
IR LD+MD |
Diodo láser infrarrojo con el diodo del monitor |
IRED |
Diodo electroluminoso infrarrojo |
IRED+MD |
Diodo electroluminoso con el diodo del |
|
monitor |
Circuito integrado de entrada/salida para |
|
|
microordenador |
Comparador (amplificador operacional) |
|
LD |
Diodo láser |
LDR |
Foto resistencia |
LED |
Diodo electroluminoso |
LED/IRED |
Diodo electroluminoso e diodo |
|
electroluminoso infrarrojo |
Circuito integrado lineal |
|
Con diodo protector de compuerta |
|
FET de |
|
|
vaciamiento (depletion) |
FET de |
|
|
enriquecimiento (enhancement) |
Circuito integrado (en tecnología MOS) |
|||
Transistor bipolar isocompuerta |
|||
MP |
Emisor/detector emparejados |
||
Circuito integrado MOS de canal N |
|||
Transistor de efecto de campo de canal N |
|||
OC |
Photocoupler |
||
Opto |
Componentes optoelectrónicos |
||
Amplificador operacional |
|||
Matriz lógica programable |
|||
PC |
Elemento de la foto |
||
PD |
Diodo de la foto (para OPICs con el amplificador |
||
|
linear integrado) |
||
PD ARRAY |
Diodo de la foto array |
||
PI |
Interruptor de la foto |
||
Diodo PIN |
|||
PIN PD |
Fotodiodo del PIN (para OPICs con el |
||
|
amplificador linear integrado) |
||
Circuito integrado MOS de canal P |
|||
Memoria ROM programable |
|||
|
eléctricamente |
||
PS |
Sensor reflexivo de la foto |
||
PT |
Transistor de la foto |
||
PTR |
Triac de la foto |
||
PUT |
Transistor uniunión (UJT) programable |
||
PYRODET |
Pyrodetector (sensor infrarrojo) |
||
Transistor de efecto de campo de canal P |
|||
QOC |
Cuádruple canal photocoupler |
||
RCLED |
LED de cavidad resonante |
||
RED LD |
Diodo láser rojo |
||
RED LD+MD |
Diodo láser rojo con el diodo de la supervisión |
||
Diodo de referencia (diodo Zener de gran |
|||
|
constancia) |
||
Memoria de lectura solamente |
|||
SAS |
Interruptor asimétrico de silicio |
||
SBS |
Interruptor bilateral de silicio |
||
Diodo de selenio |
|||
Puente rectificador de silicio |
|||
Diodo de silicio |
|||
Transistor de silicio NPN |
|
|
|
|
|||
Transistor Darlington de silicio NPN |
|
|
|
Transistor de silicio PNP |
|
|
|
Transistor Darlington de silicio PNP |
|
|
|
Diodo estabilizador de silicio |
|
|
|
|
(funcionamiento con polarización |
|
|
|
directa) |
|
|
Memoria de lectura y escritura estática |
|
|
|
SUS |
Interruptor de silicio unilateral |
|
|
Tetrode |
Tiristor de puertas P y N |
|
|
Thermistor |
Resistencia dependiente de temperatura |
|
|
Thy |
Tiristor |
||
Puente de tiristores |
|||
TOC |
Triple canal photocoupler |
||
Triac |
Triac |
||
Diodo trigger de 4 capas, asimétrico |
|||
Circuito integrado lineal (tecnología TTL) |
|||
Circuito digital (de lógica transistor- |
|||
|
transistor) |
||
UJT |
Transistor uniunión |
||
Varistor |
Resistencia dependiente de tensión (VDR) |
||
español
XIX
español
Diodo Zener (funcionamiento con |
|
|
polarización inversa) |
Regulador o estabilizador de tensión |
|
...+Di |
Con diodo supresor integrado |
...+R |
Con resistencias integradas |
Tiristor de red |
|
Microordenador de un solo chip (MOS) |
|
Microprocesador, CPU (MOS) |
Columna 3 («Descripción breve»)
Breve descripción de la función o los datos del modelo correspondiente.
Abreviaturas empleadas:
AAmplificador de antena y de banda ancha
AFC |
Control automático de recuencia |
AFT |
Ajuste fino automático |
AGC |
Obtención de la tensión regulada |
ALC |
Ajuste automático de ganancia |
AM |
Aplicación en alta frecuencia (gama de AM) |
APC |
Control automático de fase |
ARI |
Sistema de información por autoradio (RFA) |
Array |
Montaje de varios componentes en una |
|
sola cápsula |
asym |
Asimétrico |
AV |
Audio/Video |
Amplificador de registro yreproducción |
BGanancia de corriente continua
Backward |
Diodo backward |
Conmutación de gama en alta frecuencia |
|
bidirektional |
Diodo bidireccional |
Br |
Puente rectificador |
Btx |
Teletexto |
Camera |
Cámera de video |
CATV |
Amplificador para cable de banda ancha |
CB |
Para radioaficionados (banda ciudad) |
CD |
Compact disc |
Chopper |
Inversor de medida |
contr. av. |
Avalancha controlada (resistente a los |
|
picos de tensión) |
CPU |
Unidad central de proceso |
CRT |
Pantalla |
CTV |
Televisión en color |
Dem |
Demodulador |
Diskr |
Discriminador |
DMA |
Controlador de acceso directo a memoria |
Dual |
Trans. dobles para amplificador diferencial |
|
o diodo doble |
EEtapas de salida
Equal |
Ecualizador |
ESD |
Descarga electrostática |
FB |
Mando a distancia |
FED |
Diodo de efecto campo |
Memoria silo |
|
FLT |
Válvulas display de cifras |
FM |
Aplicación en alta frecuencia (gama de FM) |
FREDFET |
|
Convertidor de frecuencia a tensión |
|
gep |
Tipos aparejados |
GI |
Rectificador, en general |
Diodo Gunn |
|
HA |
Etapas de barrido horizontal en televisión |
HF |
Aplicación en alta frecuencia (en general) |
Amplificación de, corriente elevada |
|
Para gran intensidad de salida |
|
Definición alta |
|
Gran potencia |
|
Gran precisión |
|
Gran fiabilidad |
|
Resolución alta |
|
Rápido |
|
Para altas tensiones |
|
Horiz. |
Horizontal |
Para circ. demoduladores de alta impedancia |
|
Ib |
Corriente de encendido |
Igt |
Corriente superior de encendido |
Ih |
Corriente superior de corte |
Diodo impatt |
|
Indic. |
Display |
Ip |
Corriente de pico |
IPD |
Aparato potencia de inteligente |
IR |
Infrarrojo |
Is |
Corriente de encendido |
Iso |
Aislada |
Itsm |
Corriente máxima de un pulso de corriente |
Iv |
Corriente de valle |
Rectificador de alta tensión |
LEtapas de potencia
LCD |
Display de cristal líquido |
LED |
Display de diodos luminiscentes |
Memoria pila |
|
Limiter |
Limitador |
Para baja volante de potencia |
|
Baja caída de tensión |
|
LogL |
Logic Level (Uth ≈ 0,8...2V) |
Bajo consumo de potencia |
|
Tensión baja de saturación |
|
|
colector - emisor |
Para bajas tensiones |
MEtapas mezcladoras
Min |
Tipo miniatura |
MMU |
Unidad de gestión de memoria |
Multipl |
Multiplicador de frecuencia |
NF |
Aplicación en baja frecuencia |
Nix |
Excitador Nixie |
Noise suppr. |
Supresión de ruido |
Para circ. demoduladores de baja impedancia |
OEtapas osciladoras
Amplificador operacional |
|
OSD |
Avisar de pantalla |
par |
Paralelo |
PEP |
Potencia de punta de salida |
PIP |
Figura en figura |
PLL |
|
PQ |
Potencia de salida de alta frec. trans. |
|
para emisión) |
progr |
Programable |
PS |
Alimentación de corriente |
PWM |
Modulación de anchura de pulsos |
ra |
De bajo ruido |
RadH |
A prueba de radiaciones (para uso en |
|
astronáutica) |
re |
Etapas reguladas (AGC) |
Recorder |
Magnetófonos y cassettes |
Reg |
Regulador |
SEtapas conmutadoras
Schottky |
Diodo Schottky |
ser |
Serie |
SHF |
Aplicaciones de alta frecuencia (>5 GHz) |
SMD |
Componente de montaje superficial |
SMPS, SN |
Fuentes de alimentación conmutadas |
SS |
Etapas de conmutación rápidas |
SSB |
Banda lateral única |
stack |
Columna o grupo de rectificadores |
sym |
Tipos simétricos |
TAZ |
Diodo supresor |
tgq |
Tiempo de apagado |
Puente de tiristores |
|
Módulo de tiristores (varios componentes |
|
|
en una cápsula) |
Ton |
Canal de sonido en TV |
Tr |
Etapas excitadoras |
Diodo trigger de 4 capas, asimétrico |
|
Tuning |
Diodo de sintonización de aita frecuencia |
Diodo tunel |
|
TV |
Aplicación en televisión |
UART |
Emisor/receptor asíncrono universal |
Ub |
Tensión de encendido |
XX
Ucc, US |
Tensión de alimentación |
UHF |
Aplicaciones en alta frecuencia (>250 MHz) |
Uni |
Componentes universales |
US |
Ultrasonidos |
USART |
Emisor/receptor síncrono/asíncrono universal |
VEtapas previas o de entrada
VA |
Etapas de barrido vertical en televisión |
VC |
Aparato de video |
Vertik. |
Vertical |
VHF |
Aplicación en alta frecuencia |
|
(entre unos 100 y 250 MHz) |
Vid |
Etapas de salida de video |
VIR |
Corrección de color (NTSC) |
Vtx |
Videotexto, teletexto |
Convertidor de tensión a frecuencia |
|
Protección contra rayos X |
|
ZF |
Etapas de frecuencia intermedia |
ZV |
Con amplificación de encendido (darlistor) |
ßGanancia de corriente a 1 kHz
(eff) |
Valor efficaz ( = RMS) |
(ss)Valor de punta a punta
(Ta = ...°) |
Temperatura ambiente, de no ser 25°C |
|
(modelos de montaje libre) |
(Tc = ...°) |
Temperatura de referencia de la cápsula, |
|
de no ser 25°C (modelos de potencia) |
= [Typ]: |
idéntico al [modelo], aunque: |
|
[datos, figura, terminales, etc.] |
→Referencia (véase ...)
Sólo de conoce UCE0 ; normalmente se |
|
|
indican siempre UCB0 o bien UCB0/UCE0 |
|
(transistores) |
...ns |
Tiempo de recuperación con pol. inversa |
|
(diodos) |
Tiempo de conexión (transistores) |
|
.../...ns |
Tiempo de conexión/de bloqueo (transistores) |
...μs |
Tiempo de conmutación |
...+Diac |
Con diac integrado |
μComp |
Microordenador |
≈ [Typ] |
Similar al modelo indicado (véase allí la |
|
descripción) |
Columna 4 («Fig.»)
Indica el número de la figura (cifras) y la distribución de los terminales (letras siguientes) en los
Columna 5 («Fabricante»)
Por motivos de espacio se han abreviado los nombres de los fabricantes; los nombres completos se encuentran listados alfabéticamente en la página XXII. Todos estos datos se indican salvo error u omisión; tampoco puede garantizarse el suministro.
Cuando para un tipo determinado de transistor se indican varios fabricantes sólo se han tomado los datos de uno de ellos, pues los datos de un componente determinado pueden diferir ligeramente de fabricante a fabricante según las condiciones de medida.
Columna 6 («Tipos de repuesto»)
Solamente se indica una selección de los modelos más parecidos al original que desee sustituirse, indicándose sobre todo modelos fáciles de conseguir. En la práctica suelen poderse emplear muchos más modelos de repuesto que los pocos indicados en la tabla por motivos de espacio; esto se destaca mediante el símbolo « + + » después del último modelo de repuesto.
Estos manuales ECA deberían tenerse siempre a mano en casos críticos cuando se trate de efectuar una comparación exacta de diferentes modelos.
De no indicarse lo contrario mediante notas a pie de página,
los modelos de repuesto indicados poseen características eléctricas iguales o mejores, y pueden usarse sin problemas mecánicos. Solamente para los componentes de potencia y los circuitos integrados se ha tenido en cuenta que los mode- los de repuesto tengan la misma distribución de los terminales que los originales, pues para los modelos pequeños es relativemente fácil intercambiar
De todas maneras se recomienda
Cuando a un tipo de repuesto le siga el nombre (abreviado) de un fabricante entre corchetes, los datos correspondientes proceden de dicho fabricante y no han sido comprobado por los autores (!).
A veces ha sido preciso referirse a los manuales ECA exhaustivos, a fin de no sobrepasar el marco de la presente tabla. Resulta imposible tratar exhaustivamente en el marco de la presente tabla la enorme diversidad de las cápsulas y de las posibilidades de comparación existente entre los circuitos lógicos digitales, los reguladores de tensión, los diodos Zener, los tiristores y los amplificadores operacionales.
Índice de notas a pie de página para modelos de repuesto indicados entre paréntesis ( ):
1con diodo supresor integrado
2precisa un diodo supresor externo entre el emisor y el colector
3caja no aislada
4cápsula diferente - puede resultar precisa adaptarla mecánicamente
5la distribución de terminales es distinta por lo que puede resultar preciso un montaje diferente
6el modelo de repuesto es algo mayor o tiene los terminales en una trama diferente
7el modelo de repuesto presenta datos límites menores
8menor frecuencia de corte (fT)
9el tipo existe también con otros datos de encendido
10el circuito integrado de repuesto presenta una distribución distinta de los terminales o en una trama diferente
11el tipo existe también con otros datos de encendido y el tipo de recambio tiene una caja diferente.
13menor ganancia de corriente (B, hFE, ß, hfe)
15No. 1 + 5
16tipo de sustitución con gama de temperatura limitada.
17mayor tensión de saturación (UCESat)
18precisa la correspondiente resistencia externa
++ existen otras muchas posibilidades de comparación
Columna 7 («Tomo ECA»)
Nombre del manual ECA en el que pueden encontrarse los datos exactos y otras comparaciones de repuestos para el modelo buscado. En las aplicaciones y casos críticos deberían compararse siempre los parámetros más relevantes de los modelos de repuesto con los del original, para evitar «sorpresas» desagradables.
http://www.ecadata.de
A pesar de haber recopilado todos los datos con gran cuidado, no podemos excluir la posibilidad de que se haya deslizado algún error, por lo que no podemos responder de posibles daños y perjuicios.
español
XXI
|
HERSTELLER UND IHRE ABKÜRZUNGEN |
Fmi |
|
Abbreviations of manufacturers - Abréviations des fournisseurs |
Fpm |
||
Abbreviazioni dei fabbricanti - Abreviaciones de los fabricantes |
Fui |
||
++ |
More additional producer |
|
Fui |
Acc |
Accordion Electric Ltd. Co. |
|
Fuj |
Adv |
Advanced Research Association |
|
Fuj |
Aeg |
TEMIC TELEFUNKEN microelectronic |
www.temic.de |
Gdc |
Aei |
AEI Semiconductors, Ltd. |
|
Gen |
Akm |
Asahi Kasei Microsystems |
www.akm.com |
Gie |
Ald |
Advanced Linear Devices Inc. |
www.aldinc.com |
Gin |
Alp |
Alpha Industries, Inc. |
www.alphaind.com |
Gol |
Amc |
Ampower Semiconductor Corp. |
|
Gol |
Amd |
Advanced Micro Devices GmbH |
www.amd.com |
Gpd |
Amd |
Advanced Micro Devices Inc. |
www.amd.com |
Gse |
Ame |
Aksjeselskapet |
|
Gsi |
Amf |
American Machine & Foundry |
|
GUS |
Amp |
Amperex Electronic Corp. |
|
Haf |
Ams |
American Microsystems, Inc. |
www.amis.com |
Hal |
Anc |
Ancom, Ishikawa Sangyo Ltd. Co. |
|
Ham |
And |
Analog Devices |
www.analog.com |
Ham |
Ans |
Analog Systems |
|
Har |
Apt |
Advanced Power Technology |
www.advancedpower.com |
Har |
Apx |
Apex Microtechnology Corp. |
www.apexmicrotech.com |
Hbc |
Atm |
Atmel |
www.atmel.com |
Hei |
Ava |
Avantek, Inc. |
|
Hew |
B&h |
Bell & Howell Columbia Trading Ltd. Co. |
|
Hew |
Bbc |
BBC Brown Bovery, Ltd. |
|
Hfo |
Bec |
Beckmann Instruments Inc. |
|
Hit |
Bel |
Bentron Elektronik GmbH |
|
Hit |
Ben |
Bendix Semiconductor Products |
|
Hon |
Bog |
Bogue Electric Manufacturing |
|
Hon |
Bra |
Bradley Semiconductor Corp. |
|
Hpa |
Bub |
Hsc |
||
Cat |
Catalyst Semiconductor |
www.catsemi.com |
Hsm |
Cbs |
CBS electronics |
|
Hug |
Cdi |
Continental Device India, Ltd. |
www.cdil.com |
Hun |
Cen |
Central Semiconductor Corp. Devision |
www.centralsemi.com |
Hun |
Chy |
Cherry Semiconductor Corp. |
Idc |
|
Cla |
Clairex Technologies Inc. |
www.clairex.com |
Idi |
Clv |
Clevite Transistor |
|
Idr |
Cml |
Computer Labs |
|
Idt |
Cod |
CODI Corporation |
|
Idt |
Com |
Comlinear |
|
Ilc |
Cpc |
C.P. Clare Transistor Corporation |
www.cpclare.com |
Inf |
Cpd |
Control Products Division Devar Inc. |
|
Inm |
Crb |
CR.BOX |
|
|
Cri |
Crimson Semiconductor, Inc. |
|
Inr |
Csr |
CSR Industries, Inc. |
|
Int |
Ctr |
Acrian Inc. |
|
Int |
Cys |
Cypress Semiconductor Corp. |
www.cypress.com |
Isi |
Dal |
Dallas Semiconductor |
|
Iso |
Dat |
Datel Inc. |
www.datel.com |
Iss |
Dat |
Datel GmbH |
www.datel.com |
Ite |
Dci |
Dynamic Communications, Inc. |
|
Itl |
Del |
Delco Electronics |
|
Itl |
Dic |
Dickson Electronics Corp. |
|
Itr |
Die |
Diotec GmbH |
www.diotec.com |
Itt |
Dio |
Dionics, Inc. |
|
Ixy |
Dmc |
Dynamic Measurement Corp. |
|
JAP |
Dpm |
Jno |
||
Dsi |
Discrete Semiconductors Industries |
|
Kec |
Dtc |
Diode Transistor Co., Inc. |
|
Kem |
Ecg |
ECG Philips |
eu2.semiconductors.com |
Ker |
Edi |
Electronic Designs, Inc. (EDI) |
||
Edl |
EDAL Industries, Inc. |
|
Kmc |
Eiy |
El, Elektronskaja Industrija |
|
Kme |
Ela |
Élantec Semiconductor Inc. |
www.elantec.com |
Ksw |
Elc |
Elcoma |
|
Lam |
Ele |
Electromation Co. |
|
Lbd |
Elx |
Electroimpex |
|
Lic |
Emi |
Emihus Microcomponents Ltd. |
|
Lic |
Ems |
Enhanced Memory Systems Inc. |
www.enhanced.com |
Lif |
Etc |
Electronic Transistor Corporation |
|
Lit |
EUR |
|
|
Lrc |
Exi |
EXAR Corp. |
www.exar.com |
Ltc |
Exl |
Exel Microelectronics, Inc. (Rohm Co. Ltd.) www.rohm.com |
Ltc |
|
Fag |
Fagor Electrotecnica, S. Coop. |
www.fagor.com |
Lte |
Fan |
Fanon Transistor Corporation |
|
Ltt |
Fch |
Fairchild Semiconductor GmbH |
www.fairchildsemi.com |
Luc |
Fch |
Fairchild Semiconductor |
www.fairchildsemi.com |
|
Fcs |
Fairchild Semiconductor GmbH |
www.fairchildsemi.com |
Mal |
Fcs |
Fairchild Semiconductor |
www.fairchildsemi.com |
Mat |
Fer |
Ferranti GmbH |
|
Mat |
Fer |
Ferranti (Electronics) Semiconductors Ltd. |
|
Max |
Fjd |
Fuji Denki Seizo Company |
www.fujielectric.co.jp |
|
Fjd |
Fuji Electric GmbH |
www.fujielectric.co.jp |
Mbl |
Fjd |
Fuji Semiconductor Inc. |
www.fujisemiconductor.com |
Mcc |
FMI Inc. |
|
Fine Products Microelectronics Corporation |
|
Fujitsu Mikroelektronik GmbH |
|
Fujitsu Ltd. |
www.fujitsu.co.jp |
Fujitsu Ltd. |
www.fujitsu.co.jp |
Fujitsu Mikroelektronik GmbH |
|
General Diode Corporation |
|
Harris (General Electric) Semiconductor |
www.semi.harris.com |
General Instrument |
www.gi.com |
General Instrument, Optoelectronic Div. |
www.gi.com |
Goldstar (LG Electronics Deutschland) |
www.goldstar.de |
Goldstar (LG Electronics Inc.) |
www.lg.co.kr |
Germanium Power Devices Corporation |
|
General Semiconductor |
www.gensemi.com |
General Semiconductor |
www.gensemi.com |
UdSSR States located producer |
|
ASEA HAFO AB |
|
Halex Inc. |
|
HAMAMATSU PHOTONICS K.K. |
www.hpk.co.jp |
Hamamatsu Photonics Deutschland GmbH www.hamamatsu.de |
|
Harris Semiconductor |
www.harris.com |
Harris Semiconductor |
www.harris.com |
Hybrid Systems Corp. |
|
EG&G Heimann Optoelectronics GmbH |
|
Hewlett Packard |
|
Halbleiterwerk Frankfurt/Oder |
|
Hitachi Europe GmbH |
www.halsp.hitachi.com |
Hitachi Europe Ltd. |
www.halsp.hitachi.com |
Honeywell AG Optoelectronics |
www.honeywell.de |
Honeywell International Inc. |
www.honeywell.com |
Hewlett Packard |
|
Helios Semiconductor |
|
www.hsmc.com.tw |
|
Hughes Aircraft Company |
|
Hyundai Electronics Industries Co., Ltd. |
www.hei.co.kr |
Hyundai Electronics Deutschland (HED) |
www.hea.com |
International Diode Corporation |
|
International Devices, Inc. |
|
I.P.R.S. Baneasa |
|
Integrated Device Technology (IDT) |
www.idt.com |
Integrated Device Technology GmbH |
www.idt.com |
ILC Data Device Corp. |
|
Infineon Technologies AG |
www.infineon.com |
(Siemens Semiconductor Group) |
|
INMOS (siehe |
www.st.com |
International Rectifier Corporation |
www.irf.com |
Intel GmbH |
www.intel.com |
Intel Corporation |
www.intel.com |
Harris Semiconductor |
www.semi.harris.com |
Isocom Inc. (Components, LTD.) |
www.isocom.com |
Integrated Silicon Solution, Inc. |
www.issi.com |
Intech/FMI Inc. |
|
Intersil Europe |
www.intersil.com |
Intersil Corporation Headquarters |
www.intersil.com |
Intronics Inc. |
|
ITT Intermetall (Micronas Semiconductors) |
|
IXYS Semiconductor GmbH |
www.ixys.com |
Unkown or several japanese Producter |
|
JENOPTIK Laserdiode GmbH |
www.jold.de |
KEC, Korea Electronics Co., Ltd. |
www.kec.co.kr |
Kemtron Electron Products |
|
Kertron, Inc. |
|
|
|
|
|
Kombinat Mikroelektronik Karl Marx Erfurt |
|
KSW Electronics Corp. |
|
Lambda Semiconductors |
|
Lambda Semiconductors |
|
Linear Technology Corporation |
|
Linear Technology GmbH |
|
Littelfuse |
www.littelfuse.com |
Taiwan Liton Electronic Co., Ltd. |
www.liteon.com |
Leshan Radio Company Ltd. |
|
Linear Technology Corporation |
|
Linear Technology GmbH |
|
Landsdale Transistor & Electronics, Inc. |
|
Lignes Telegraphiques et Telephoniques |
www.st.com |
|
|
Lucas Electrical Co., Ltd. |
|
Mallory Distributor Products Co. |
|
Matsushita Electronics Corp. |
www.mei.co.jp |
Matsushita Electronics (Europe) GmbH |
www.matsushita- |
|
europe.com |
Maxim Integrated Products Ltd. |
|
M.B.L.E. (Philips Semiconductors) |
eu2.semiconductors.com |
Microchip Technology Inc. |
www.microchip.com |
XXII
Mcr |
MICREL Semiconductor UK Lim. |
www.micrel.com |
Sak |
Sanken Electric Co., Ltd. |
|
Mdc |
Microwave Diode Corp. |
|
|
(Allegro Micro Systems) |
|
Med |
Meder Electronic AG |
www.meder.com |
Sam |
SAMSUNG Semiconductor Europe GmbH |
www.samsungsemi.com |
Mhs |
TemicTelefunken microelectronic GmbH |
www.temic.de |
Sam |
SAMSUNG EUROPE |
www.samsungsemi.com |
Mic |
Micro Electronics, Ltd. |
|
|
PLC. SEMICONDUCTOR DIVISION |
|
Min |
Micron Technology, Inc. |
|
Say |
Tokyo Sanyo Electric Co., Ltd. |
www.semic.sanyo.co.jp |
Mis |
Mistral |
www.st.com |
Say |
SANYO Semiconductors (Europe) GmbH |
www.sanyo.de |
Mit |
Mitsubishi Electric Europe GmbH |
www.mitsubishichips.com |
Sca |
Semicoa |
|
Mit |
Mitsubishi Electric Corporation |
www.mitsubishichips.com |
Scn |
Semicon Components Inc. |
www.semicon.com |
Miv |
Microwave Associates |
|
Seb |
Semelab |
|
Mmi |
AMD (Advanced Micro Devices) |
www.amd.com |
Sem |
Semitronics Corporation |
|
Mod |
Modular Devices Inc. |
|
Sen |
Sensitron Semiconductor |
|
Mos |
Mostek |
www.st.com |
Seq |
SEEQ Technology, Inc. |
www.seeq.com |
Mot |
Motorola GmbH |
Ses |
Sescosem (Thomson CSF) |
|
|
Mot |
Motorola Semiconductor Products Ltd. |
Sgs |
www.st.com |
||
Mpi |
Micropac Industries Inc. |
www.micropac.com |
Sgs |
SGS Semiconductor Ltd |
www.st.com |
Mpi |
Micropac Europe |
www.micropac.com |
Sha |
Sharp Microelectronics |
www.sharpmeg.com |
Mps |
Micro Power Systems |
|
Sha |
Sharp Electronics (Europe) GmbH |
|
Msc |
Microsemi MicroPower Products |
www.microsemi.com |
Shi |
Shindengen Inc. |
www.shindengen.com |
Msp |
MOSPEC SEMICONDUCTOR CORP. |
www.mospec.com.tw |
Sie |
Siemens AG |
www.infineon.com |
Msy |
Microsystems |
|
Sig |
Signetics Corporation |
www.signetics.com |
Mts |
Mitsumi Electric Co. Ltd. |
www.mitsumi.com |
Sii |
Silonex Inc. |
www.silonex.com |
Mul |
Mullard Ltd. (Philips Semiconductors) |
eu2.semiconductors.com |
Sil |
Silicon General Inc. |
www.linfinity.com |
Mwa |
Microwave Associates, Inc. |
|
|
(Linfinity Microelectronics) |
|
Mws |
Microwave Semiconductor Corporation |
|
Sip |
Sipex Corporation |
www.sipex.com |
Nac |
National Aircraft Corporation |
|
Sip |
SIPEX GmbH |
www.sipex.com |
Nae |
NAE, Inc. |
|
Six |
Siliconix GmbH |
www.siliconix.com |
Nas |
North American Semiconductor Co., Inc. |
|
|
(Temic Telefunken microelectronic GmbH) |
|
Nec |
NEC Electronics (Germany) GmbH |
www.nec.de |
Skr |
Semikron GmbH & Co. KG |
www.semikron.de |
Nec |
NEC Electronics Inc., |
www.ic.nec.co.jp |
Sld |
Solid State Industries, Inc. |
|
Neq |
Nuclear Equipment Corp. |
|
Smi |
Semitron, Ltd. |
|
New |
Newmarket Transistors, Ltd. |
|
Smo |
|
|
Nih |
Nihon Inter Electronics Corporation |
www.niec.co.jp |
Smt |
Semtech Corporation |
www.semtech.com |
Njr |
New Japan Radio Co., Ltd. |
www.njr.com |
Sol |
Solitron Devices, Inc. |
|
Npp |
National Power Products |
|
Son |
Sony Europa |
www.sel.sony.com/semi/ |
Nsc |
National Semiconductor GmbH |
www.national.com |
Son |
Sony Semiconductor Europe Limited |
www.sel.sony.com/semi/ |
Nsc |
National Semiconductor |
www.national.com |
Sov |
UdSSR |
|
Nte |
NTE Electronics Inc. |
www.nteinc.com |
Spc |
Solid Power Corporation |
|
Ntn |
Hermann Koehler Elektrik GmbH & Co. |
|
Spe |
Space Power Electronic, Inc. |
|
Nuc |
Nucleonic Products Co., Inc. |
|
Spr |
Sprague Electric Co. |
|
Odc |
Opto Diode Corporation |
www.optodiode.com |
Spt |
Signal Processing Technologies |
www.spt.com |
Oiz |
Oizumi Seisakusho |
|
Ssc |
SSC, Silec - Semi - Conductors |
|
Oki |
OKI Electric Europe GmbH |
www.oki.com |
Ssi |
Solid State Devices, Inc. |
|
Oki |
OKI Electric Industry Co. Ltd. |
www.oki.com |
Sss |
Solid State Scientific, Inc. |
|
old |
Old unknown producer |
|
Sta |
Standard Telephones & Cables |
|
Omr |
OMRON Europe B.V. (OMCE) |
www.omron.de |
Stc |
Silicon Transistor Corp. (STC) |
|
Ons |
ON Semiconductor Inc. |
www.onsemiconductor.com |
Stl |
Stanley Electric GmbH |
www.stanleyelec.com |
Opa |
Opamp Labs Inc. |
|
Stl |
Stanley Electric Co. |
www.stanleyelec.com |
Opt |
Optical Electronics Inc. |
|
Stm |
STMicroelectronics |
www.st.com |
Org |
Origin Electric Co., Ltd. |
|
Stw |
Stow Laboratories, Inc. |
|
Pai |
Parametric Industries, Inc. |
|
Stx |
Supertex Inc. |
www.supertex.com |
Pan |
Panasonic |
www.panasonic.co.jp |
Sty |
Semiconductor Technology, Inc. |
|
Pan |
Panasonic Deutschland GmbH |
www.panasonic.de |
Stz |
ST Semicon, Inc. |
|
Per |
Pericom Semiconductor Corporation |
www.pericom.com |
Syl |
Sylvania Semiconductors |
|
Phb |
Philco Radio Televisao, Ltda. |
|
Sym |
Symbol Semiconductor Inc. |
|
Phc |
Philco Corporation |
|
Tag |
TAG Semiconductors |
www.temic.de |
Phi |
Philips Semiconductor |
eu2.semiconductors.com |
Tcr |
Teccor Electronics Inc. |
www.teccor.com |
Pih |
Piher Semiconductors |
|
Tcs |
Telcom Semiconductor Inc. |
|
Pls |
Plessey Semiconductors, Ltd. |
|
|
(Teledyne Components) |
|
Ply |
Plessey Semiconductors, Ltd. |
|
Tdy |
TELEDYNE Components |
|
Pmi |
Precision Monolithics Inc. |
|
Tel |
Temic Telefunken Microelectronic GmbH |
www.temic.de |
Poi |
Power Innovations Ltd. |
www.powinv.com |
Tem |
Temic Telefunken Microelectronic GmbH |
www.temic.de |
Ppc |
PPC Products Corporation |
|
Tes |
Tesla Electronic Components (Ecimex) |
|
Ptc |
Power Transistor |
The |
|
||
Pti |
Power Tech, Inc. |
Tho |
www.st.com |
||
Pwi |
Power Integrations, Inc. |
www.powerint.com |
Thr |
|
|
Pwx |
Powerex Inc. |
www.pwrx.com |
Tic |
Transistor International Corporation |
|
Qdc |
Qualidyne Corporation |
|
Tix |
Texas Instruments Deutschland GmbH |
www.ti.com |
Qse |
Quality Semiconductor Inc. |
www.qualitysemi.com |
Tix |
Texas Instruments |
www.ti.com |
Qsi |
Quality Semiconductor Inc. |
www.qualitysemi.com |
Tom |
Thomson Bauelemente GmbH |
|
Qtc |
Quality Technologies Corporation |
|
Tos |
Toshiba Electronics Europe GmbH |
www.toshiba.com |
Qua |
Quality Technologies Corporation |
|
Tos |
Toshiba Electronics U.K. Ltd. |
www.toshiba.com |
Ray |
Raytheon Halbleiter GmbH |
www.raytheon.com |
Toy |
Toyo Denki Seizo Electronics Industry Corp. |
|
Ray |
Raytheon Semiconductor Co. |
www.raytheon.com |
Tra |
Transitron Electronic Corp. |
|
Rca |
RCA Corporation (Harris Semiconductor) |
www.semi.harris.com |
Trw |
TRW Vertriebs GmbH |
www.trw.com |
Rec |
Rectron Semiconductor |
www.rectron.net |
Trw |
TRW LSI Products Inc. (Semiconductors) |
www.trw.com |
Ren |
Renesas Technology Singapore Pte. Ltd. |
www.renesas.com |
Tsc |
Teledyne Semiconductor |
|
Rfm |
RF Micro Devices, Inc. |
www.rfmd.com |
Tsm |
Tungsram GmbH |
|
Rhm |
Rohm Co. Ltd. |
www.rohm.co.jp |
Tun |
|
|
Rhm |
Rohm Electronics GmbH |
www.rohm.com |
Twa |
Tokyo Wireless Apparatures |
|
Riz |
RIZ Radio Industrie Zagreb/Iskra Ljubljana |
|
Ucp |
|
|
Roc |
Rochester Electronics Inc. |
www.rocelec.com |
Unc |
www.hitech.com.pl |
|
Roe |
Vishay Roederstein GmbH |
www.vishay.com |
Ung |
Ungarn |
|
Roh |
Rohm Electronics GmbH |
www.rohm.com |
Uni |
Unitrode Corporation |
www.unitrode.com |
Roh |
Rohm Co. Ltd. |
www.rohm.co.jp |
Uni |
Unitrode Electronics GmbH |
www.unitrode.com |
Roi |
|
Unz |
Unizon |
|
|
Rtc |
R.T.C. La |
|
Upi |
UPI Semiconductor |
|
XXIII
USA |
USA located producer |
|
Wes |
Western Electric Co. |
|
Usr |
V/O Elektronzagranpostavka |
|
Wfb |
Werk für Fernsehelektronik Berlin |
|
UTC |
Unisonic Technologies Co., LTD. |
www.unisonic.com.tw |
Whs |
Westinghouse Electric Corporation |
|
Vac |
EG&G Vactec |
|
Zel |
Zeltex Inc. |
|
Val |
Valvo (Philips Semiconductor) |
eu2.semiconductors.com Zex |
Zetex Inc. |
www.zetex.com |
|
Vis |
Vishay Intertechnology, Inc. |
www.vishay.com |
Zex |
Zetex GmbH |
www.zetex.com |
Vtc |
VTC Inc. |
www.vtc.com |
Zil |
Zilog, Inc. |
www.zilog.com |
Wab |
Walbern Devices, Inc. |
|
Ztx |
Zetex GmbH |
www.zetex.com |
Wea |
West Ace |
|
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AD |
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E
Sonderrabatt von 20% für alle VRT Buchbenutzer.
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AD |
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Special discount of 20% for all vrt book user
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XXIV
|
Art |
Kurzbeschreibung |
|
Herst. |
Vergleichstypen |
|
Typ |
Device |
Short description · Description succ. |
Bild |
Manu. |
Comparisontypes · Types d’equivalence |
more at |
Type · Tipo |
Genre · Tipo |
Descrizione somm. · Descripción breve |
Fig. |
Fabr. |
Tipi correspondenti · Tipos de repuesto |
www.ecadata.de |
|
Specie |
|
Prod. |
|||
|
|
|
|
|
||
BB 439 |
=BB 419: |
71a(1,7mm) |
Sie |
MA 361, MA 364 |
data pdf |
|
BB 501 |
7c |
Sie |
BA 121, BB 117, BB 417, 1SV89 |
data pdf |
||
BB 502 |
7c |
Sie |
BA 125, BB 119, 1SV114, 1SV125 |
data |
||
BB 503 |
=BB 501: SMD |
35e |
Sie,Tho |
- |
data pdf |
|
BB 503 DK |
=BB 501: SMD, Dual |
35l |
Tho |
- |
data |
|
BB 504 |
=BB 502: SMD |
35e |
Sie,Tho |
- |
data |
|
|
|
|
|
|
|
|
BB 505 B |
31a |
Aeg,Sie |
BB 105A,B, BB 205A,B, BB 405A,B, ++ |
data |
||
BB 505 G |
31a |
Aeg,Sie |
BB 105G, BB 205G, BB 405G, ++ |
data |
||
BB 509 |
7c |
Itt |
- |
data |
||
BB 510 |
SMD, Dual, |
35m1 |
Itt |
- |
data |
|
|
|
|
|
|
|
|
BB 512 |
SMD, |
71a(2,7mm) |
Sie |
- |
data pdf |
|
|
|
|
|
|
|
|
BB 515 B,G |
SMD, |
71a(2,7mm) |
Phi,Sie |
BB 721 |
data |
|
BB 521 |
=BB 221: verbess./improved Linear. |
31a |
Itt |
→BB 221 |
data |
|
BB 523 |
31a |
Itt |
BB 105A,B, BB 205A,B, BB 405A,B, BB 505B |
data |
||
|
|
|
|
|
|
|
BB 525 |
SMD, Tuning |
71a(2,7mm) |
Sie |
- |
data |
|
|
|
|
|
|
|
|
BB 529 |
=BB 329: verbess./improved Linear. |
31a |
Itt |
→BB 329 |
data |
|
|
|
|
|
|
|
|
BB 531 |
31a |
Itt |
BB 105G, BB 205G, BB 405G, BB 505G, ++ |
data pdf |
||
|
|
|
|
|
|
|
BB 535 |
=BB 515: |
71a(1,7mm) |
Sie |
MA 360, MA 372, 1SV214, 1SV223 |
data pdf |
|
BB 545 |
=BB 525: |
71a(1,7mm) |
Sie |
- |
data pdf |
|
BB 555 |
=BB 535: |
71a(1,3mm) |
Sie |
- |
data pdf |
|
BB 565 |
=BB 545: |
71a(1,3mm) |
Sie |
- |
data pdf |
|
BB 601 |
SMD, |
71a(2,7mm) |
Itt |
- |
data |
|
|
|
|
|
|
|
|
BB 609 A,B |
31a |
Aeg,Sie |
BB 106, BB 209, BB 229, BB 409, ++ |
data |
||
BB 610 |
31a |
Sie |
BB 105G, BB 205G, BB 405G, BB 505G, ++ |
data |
||
BB 619(A,B) |
SMD, |
71a(2,7mm) |
Phi,Sie |
BB 515B,G, BB 723, BB 729¼731 |
data |
|
BB 620 |
SMD, |
71a(2,7mm) |
Phi,Sie |
- |
data pdf |
|
|
|
|
|
|
|
|
BB 621 |
=BB 221: SMD |
72a(3,4mm) |
Aeg,Itt |
BB 215, BB 623 |
data pdf |
|
BB 622 |
=BB 222: SMD |
72a(3,4mm) |
Aeg,Itt |
BB 215, BB 623 |
data pdf |
|
BB 623 |
SMD, |
72a(3,4mm) |
Itt |
BB 215, BB 621¼622 |
data |
|
BB 629 |
=BB 329: SMD |
72a(3,4mm) |
Aeg,Itt |
BB 219, BB 631 |
data pdf |
|
|
|
|
|
|
|
|
BB 631 |
SMD, |
72a(3,4mm) |
Itt |
BB 219, BB 629 |
data |
|
|
|
|
|
|
|
|
BB 639(C) |
=BB 619: |
71a(1,7mm) |
Sie |
MA 365, MA 374, 1SV231 |
data pdf |
|
BB 640 |
=BB 620: |
71a(1,7mm) |
Sie |
- |
data pdf |
|
|
|
|
|
|
|
|
BB 644 |
SMD, |
71a(1,7mm) |
Sie |
BB 439, MA 361, MA 364 |
data pdf |
|
|
|
|
|
|
|
|
BB 659(C) |
=BB 619: |
71a(1,3mm) |
Sie |
- |
data pdf |
|
BB 664 |
=BB 644: |
71a(1,3mm) |
Sie |
- |
data pdf |
|
BB 669 |
SMD, |
71a(1,7mm) |
Sie |
- |
data pdf |
|
|
|
2,7/56pF(28/1V) |
|
|
|
|
BB 689 |
=BB 669: |
71a(1,3mm) |
Sie |
- |
data pdf |
|
|
|
|
|
|
|
|
BB 709 A,B |
71a(4mm) |
Sie,Tho |
BB 106, BB 209, BB 229, BB 409, ++ |
data |
||
|
|
|
|
|
|
|
BB 721 |
SMD, |
71a(2,7mm) |
Itt, Gsi |
BB 723 |
data pdf |
|
|
|
14¼16,3pF(2V), <0,8ê(470MHz) |
|
|
|
|
BB 721 S |
=BB 721: |
71a(1,7mm) |
Gsi |
- |
data pdf |
|
BB 723 |
SMD, |
71a(2,7mm) |
Itt |
BB 721 |
data |
|
BB 729 |
71a(2,7mm) |
Itt, Gsi |
BB 723, BB 730¼731 |
data pdf |
||
|
|
30¼33pF(28V), <0,8ê(470MHz) |
|
|
|
|
BB 729 S |
=BB 729: |
71a(1,7mm) |
Gsi |
- |
data pdf |
|
BB 730 |
SMD, VHF Tuning, 28V, 3,15¼3,55(28V) |
71a(2,7mm) |
Itt |
BB 723, BB 729, BB 731 |
data |
|
BB 731 |
SMD, |
71a(2,7mm) |
Itt, Gsi |
BB 723, BB 729¼730 |
data pdf |
|
|
|
3,15¼3,55/50pF(28/1V), <1ê(300MHz) |
|
|
|
|
BB 731 S |
=BB 731: |
71a(1,7mm) |
Gsi |
- |
data pdf |
|
BB 801 |
SMD, |
35a |
Sie |
- |
data |
|
BB |
SMD, Dual, |
35l |
Aeg,Phi,Sie |
BB 404, BB 814 |
data |
|
|
|
|
|
|
|
|
BB 809 |
31a |
Phi,Tho |
BB 106, BB 209, BB 229, BB 409, ++ |
data pdf |
||
|
|
|
|
|
|
|
BB 811 |
SMD, |
71a(2,7mm) |
Phi,Sie |
- |
data pdf |
|
BB 813 |
SMD, |
71a(2,7mm) |
Sie |
- |
data |
|
BB |
SMD, Dual, |
35l |
Aeg,Sie |
BB 404, BB 804 |
data |
|
BB 824 |
SMD, Dual, Tuning |
35l |
Aeg |
- |
data pdf |
|
|
|
|
|
|
|
|
BB 831 |
=BB 811: |
71a(1,7mm) |
Sie |
1SV245 |
data pdf |
|
BB 833 |
=BB 813: |
71a(1,7mm) |
Sie |
1SV245 |
data pdf |
|
|
|
|
|
|
|
|
BB 835 |
SMD, |
71a(1,7mm) |
Sie |
1SV245 |
data pdf |
|
|
|
|
|
|
|
|
BB 857 |
SMD, |
71a(1,3mm) |
Sie |
- |
data pdf |
|
|
|
|
|
|
|
|
BB 901 |
SMD, |
35e |
Phi |
- |
data pdf |
|
|
|
|
|
|
|
|
BB 909 A,B |
31a |
Phi,Tho |
BB 106, BB 209, BB 229, BB 409, ++ |
data |
||
|
|
|
|
|
|
|
BB 910 |
31a |
Phi |
- |
data pdf |
||
|
|
2,4¼2,7/>38pF(28/0,5V) |
|
|
|
|
BB 911(A) |
SMD, |
31a |
Phi |
- |
data |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
— 100 —
Schrift N6.50, Schrift B8.00 |
02.08.2007 |
|
13:50:25 |
|
Art |
Kurzbeschreibung |
|
Herst. |
Vergleichstypen |
|
Typ |
Device |
Short description · Description succ. |
Bild |
Manu. |
Comparisontypes · Types d’equivalence |
more at |
Type · Tipo |
Genre · Tipo |
Descrizione somm. · Descripción breve |
Fig. |
Fabr. |
Tipi correspondenti · Tipos de repuesto |
www.ecadata.de |
|
Specie |
|
Prod. |
|||
|
|
|
|
|
||
BSS 229 |
=BSS 139: 0,07A |
7c |
Sie |
- |
data pdf |
|
BSS 284 |
35a |
Sie |
BSS 84, 2SJ185 |
data pdf |
||
|
|
|
|
|
|
|
BSS 295 |
7c |
Sie |
2SK1272, 2SK1274, 2SK1733, 2SK1736, ++ |
data pdf |
||
BSS 296 |
7c |
Sie |
2SK941, 2SK1484, 2SK1729 |
data pdf |
||
BSS 297 |
7c |
Sie |
- |
data pdf |
||
|
|
|
|
|
|
|
BSS 395 |
13c |
Sie |
- |
data |
||
BSS 396 |
13c |
Sie |
- |
data |
||
BSS 397 |
13c |
Sie |
- |
data |
||
|
|
|
|
|
|
|
BSS 7728 |
35a |
Sie |
BSS 123, 2SK1590 |
data pdf |
||
BST
BST 15 |
SMD, NF/S/Vid, 200V, 1A, >15MHz |
39b |
Phi, Ztx |
- |
data pdf |
|
BST 16 |
=BST 15: 350V |
39b |
Phi, Ztx |
- |
data pdf |
|
|
|
|
|
|
|
|
BST 39 |
SMD, NF/S/Vid, 450V, 1A, >70MHz |
39b |
Phi, Ztx |
- |
data pdf |
|
BST 40 |
=BST 39: 300V |
39b |
Phi, Ztx |
- |
data pdf |
|
BST 50 |
SMD, 60V, 0,5/1,5A, 350MHz, B>2000 |
39b |
Phi |
2SD1470, 2SD1472, 2SD1511 |
data pdf |
|
BST 51 |
=BST 50: 80V |
39b |
Phi, Ztx |
2SD1472 |
data pdf |
|
BST 52 |
=BST 50: 100V |
39b |
Phi, Ztx |
2SD1472 |
data pdf |
|
BST 60 |
SMD, 60V, 0,5/1,5A, 350MHz, B>2000 |
39b |
Phi |
2SB1048 |
data pdf |
|
BST 61 |
=BST 60: 80V |
39b |
Phi, Ztx |
- |
data pdf |
|
BST 62 |
=BST 60: 100V |
39b |
Phi |
- |
data pdf |
|
BST |
=BST 60: 85V |
39b |
Ztx |
- |
data |
|
BST 70 |
7c |
Phi |
BSS 296, 2SK423, 2SK940¼41 |
data pdf |
||
BST 70 A |
=BST 70: |
7a |
|
→BST 70 |
data pdf |
|
BST 72 |
7c |
Phi |
BSS 88¼89, BSS 91, 2SK1337 |
data |
||
BST 72 A |
=BST 72: |
7a |
|
→BST 72 |
data pdf |
|
BST 74 |
7c |
Phi |
BSS 88¼89, BSS 91, BSN 205 |
data |
||
BST 74 A |
=BST 74: |
7a |
|
→BST 74 |
data pdf |
|
BST 76 |
7c |
Phi |
BSS 89, BSS 91, BSS 297 |
data pdf |
||
BST 76 A |
=BST 76: |
7a |
|
→BST 76 |
data pdf |
|
BST 78 |
14b$ |
Phi |
- |
data |
||
BST 80 |
=BST 70: SMD |
39b |
Phi |
2SK601, 2SK1078¼1079 |
data pdf |
|
BST 82 |
=BST 72: SMD |
35a |
Phi |
- |
data pdf |
|
BST 84 |
=BST 74: SMD |
39b |
Phi |
BSS 87 |
data pdf |
|
BST 86 |
=BST 76: SMD |
39b |
Phi |
BSS 87 |
data pdf |
|
BST 90 |
=BST 70: 2,5W |
2a$ |
Phi |
- |
data |
|
BST 95 |
2a$ |
Phi |
- |
data |
||
BST 97 |
=BST 76: 0,4W |
2a |
Phi |
- |
data |
|
|
|
|
|
|
|
|
BST 100 |
7a |
Phi |
2SJ198, 2SJ228, 2SJ231 |
data pdf |
||
BST 110 |
7a |
Phi |
BSP 204, 2SJ198, 2SJ228, 2SJ231 |
data |
||
BST 120 |
=BST 100: SMD |
39b |
Phi |
2SJ199, 2SJ212¼213 |
data pdf |
|
BST 122 |
=BST 110: SMD |
39b |
Phi |
2SJ199, 2SJ212¼213 |
data pdf |
|
BST 124 |
14b |
Phi |
- |
data |
||
|
|
|
|
|
|
|
BSt A30 26 |
400V, 0,6A(Ta=45ÊC), Igt/Ih<10/<40mA |
27b |
Sie |
data |
||
BSt A30 26 M |
400V, 0,8A(Ta=45ÊC), Igt/Ih<10/<40mA |
27b |
Sie |
data |
||
BSt A30 33 |
=BStA3026: 500V |
27b |
|
data |
||
BSt A30 33 M |
=BStA3026M: 500V |
27b |
|
data |
||
BSt A30 40 |
=BStA3026: 600V |
27b |
|
data |
||
BSt A30 40 M |
=BStA3026M: 600V |
27b |
|
data |
||
BSt A30 46 |
=BStA3026: 700V |
27b |
|
data |
||
BSt A30 46 M |
=BStA3026M: 700V |
27b |
|
data |
||
BSt A30 53 |
=BStA3026: 800V |
27b |
|
BStA3053M, |
data |
|
BSt A30 53 M |
=BStA3026M: 800V |
27b |
|
data |
||
BSt B01 06 |
100V, 0,8A(Ta=45ÊC), Igt/Ih<10/<60mA |
27b |
Sie |
data |
||
BSt B01 13 |
=BStB0106: 200V |
27b |
|
data |
||
BSt B01 26 |
=BStB0106: 400V |
27b |
|
data |
||
BSt B01 33 |
=BStB0106: 500V |
27b |
|
data |
||
BSt B01 40 |
=BStB0106: 600V |
27b |
|
data |
||
BSt B01 46 |
=BStB0106: 700V |
27b |
|
data |
||
BSt B02 06 |
100V, 3A(Tc=64ÊC), Igt/Ih<10/<60mA |
28a |
Sie |
data |
||
BSt B02 13 |
=BStB0206: 200V |
28a |
|
data |
||
BSt B02 26 |
=BStB0206: 400V |
28a |
|
data |
||
BSt B02 33 |
=BStB0206: 500V |
28a |
|
data |
||
BSt B02 40 |
=BStB0206: 600V |
28a |
|
data |
||
BSt B02 46 |
=BStB0206: 700V |
28a |
|
data |
||
BSt C01 06 |
100V, 5A(Tc=82ÊC), Igt/Ih<35/<90mA |
21b$ |
Sie |
BStC0313, BStD0313, |
data |
|
BSt C01 13 |
=BStC0106: 200V |
21b$ |
|
BStC0313, BStD0313, |
data |
|
BSt C01 26 |
=BStC0106: 400V |
21b$ |
|
BStC0326, BStD0326, |
data |
|
BSt C01 33 |
=BStC0106: 500V |
21b$ |
|
BStC0340, BStD0340, |
data |
|
BSt C01 40 |
=BStC0106: 600V |
21b$ |
|
BStC0340, BStD0340, |
data |
|
BSt C01 46 |
=BStC0106: 700V |
21b$ |
|
BStC0353, BStD0353, |
data |
|
BSt C02 06 |
100V, 3,5A(Tc=67ÊC), Igt/Ih<20/<60mA |
28a |
Sie |
data |
||
BSt C02 13 |
=BStC0206: 200V |
28a |
|
data |
||
BSt C02 26 |
=BStC0206: 400V |
28a |
|
data |
||
BSt C02 33 |
=BStC0206: 500V |
28a |
|
data |
||
BSt C02 40 |
=BStC0206: 600V |
28a |
|
data |
||
BSt C02 46 |
=BStC0206: 700V |
28a |
|
data |
||
— 177 —
Schrift N6.50, Schrift B8.00 |
02.08.2007 |
|
13:50:31 |
|
Art |
Kurzbeschreibung |
|
Herst. |
Vergleichstypen |
|
|
Typ |
Device |
Short description · Description succ. |
Bild |
Manu. |
Comparisontypes · Types d’equivalence |
|
more at |
Type · Tipo |
Genre · Tipo |
Descrizione somm. · Descripción breve |
Fig. |
Fabr. |
Tipi correspondenti · Tipos de repuesto |
www.ecadata.de |
|
|
Specie |
|
Prod. |
||||
|
|
|
|
|
|
||
BSt C03 13 |
200V, 11,4A(Tc=85ÊC), Igt/Ih<40/<30mA |
21b$ |
Sie |
BStD0313, |
|
data |
|
BSt C03 26 |
=BStC0313: 400V |
21b$ |
|
BStD0326, |
|
data |
|
BSt C03 40 |
=BStC0313: 600V |
21b$ |
|
BStD0340, |
|
data |
|
BSt C03 53 |
=BStC0313: 800V |
21b$ |
|
BStD0353, |
|
data |
|
BSt C03 66 |
=BStC0313: 1000V |
21b$ |
|
BStD0366, |
|
data |
|
BSt C03 80 |
=BStC0313: 1200V |
21b$ |
|
BStD0380, |
|
data |
|
BSt C05 06 |
100V, 5A(Tc=76ÊC), Igt/Ih<20/<60mA |
22a$ |
Sie |
|
data |
||
BSt C05 13 |
=BStC0506: 200V |
22a$ |
|
|
data |
||
BSt C05 26 |
=BStC0506: 400V |
22a$ |
|
|
data |
||
BSt C05 33 |
=BStC0506: 500V |
22a$ |
|
|
data |
||
BSt C05 40 |
=BStC0506: 600V |
22a$ |
|
|
data |
||
BSt C05 46 |
=BStC0506: 700V |
22a$ |
|
|
data |
||
BSt C06 06 |
100V, 3,2A(Tc=65ÊC), Igt/Ih<50/<100mA |
22a$ |
Sie |
S3700B, T3S400, |
data |
||
BSt C06 13 |
=BStC0606: 200V |
22a$ |
|
S3700B, T3S400, |
data |
||
BSt C06 26 |
=BStC0606: 400V |
22a$ |
|
S3700D, T3S400, |
data |
||
BSt C06 33 |
=BStC0606: 500V |
22a$ |
|
S3700M, T3S500, |
|||
BSt C06 40 |
=BStC0606: 600V |
22a$ |
|
S3700M, T3S600, |
|||
BSt C06 43 |
=BStC0606: 650V |
22a$ |
|
T3S700, |
|
data |
|
BSt C06 46 |
=BStC0606: 700V |
22a$ |
|
T3S700, |
|
data |
|
BSt C06 50 |
=BStC0606: 750V |
22a$ |
|
|
data |
||
BSt C06 53 |
=BStC0606: 800V |
22a$ |
|
|
data |
||
BSt C07 06 |
100V, 0,9A(Tc=45ÊC), Igt/Ih<20/<60mA |
27b |
Sie |
BStC3026, |
|
data |
|
BSt C07 13 |
=BStC0706: 200V |
27b |
|
BStC3026, |
|
data |
|
BSt C07 26 |
=BStC0706: 400V |
27b |
|
BStC3026, |
|
data |
|
BSt C07 33 |
=BStC0706: 500V |
27b |
|
BStC3033, |
|
data |
|
BSt C07 40 |
=BStC0706: 600V |
27b |
|
BStC3040, |
|
data |
|
BSt C07 46 |
=BStC0706: 700V |
27b |
|
BStC3046, |
|
data |
|
BSt C09 26T92 |
400V, Igt<50mA |
22a$ |
Sie |
- |
|
data |
|
BSt C09 30T92 |
450V, Igt<50mA |
22a$ |
|
- |
|
data |
|
|
|
|
|
|
|
|
|
BSt C10 26 |
400V, 4A(Tc=85ÊC), Igt/Ih<25/<80mA |
17h$ |
Sie |
|
data |
||
BSt C10 26 M |
400V, 6A(Tc=85ÊC), Igt/Ih<25/<80mA |
17h$ |
Sie |
|
data |
||
BSt C10 33 |
=BStC1026: 500V |
17h$ |
|
|
data |
||
BSt C10 33 M |
=BStC1026M: 500V |
17h$ |
|
|
data |
||
BSt C10 40 |
=BStC1026: 600V |
17h$ |
|
|
data |
||
BSt C10 40 M |
=BStC1026M: 600V |
17h$ |
|
|
data |
||
BSt C10 46 |
=BStC1026: 700V |
17h$ |
|
data |
|||
BSt C10 46 M |
=BStC1026M: 700V |
17h$ |
|
|
data |
||
BSt C10 53 |
=BStC1026: 800V |
17h$ |
data |
||||
BSt C10 53 M |
=BStC1026M: 800V |
17h$ |
|
|
data |
||
BSt C12 26 |
400V, 2,5A(Tc=80ÊC), Igt/Ih<50/<100mA |
17h$ |
Sie |
S5800D, BT153, |
|
data |
|
|
|
|
|
|
(BStCC0233H, S3900E, 17088)15 |
|
data |
BSt C12 33 |
=BStC1226: 500V |
17h$ |
|
S5800E, BT153, |
|
data |
|
|
|
|
|
|
(BStCC0233H, S3900E, 17088)15 |
|
data |
BSt C12 40 |
=BStC1226: 600V |
17h$ |
|
S5800M, |
|
data |
|
|
|
|
|
|
(BStCC0240H, S3900MF, 17088)15 |
|
data |
BSt C12 46 |
=BStC1226: 700V |
17h$ |
|
S5800S, |
|
data |
|
|
|
|
|
|
(BStCC0246H, S3900S, 17088)15 |
|
data |
BSt C12 50 |
=BStC1226: 750V |
17h$ |
|
S5800N, |
|
data |
|
|
|
|
|
|
(BStCC0253H, S3900SF, 17088)15 |
|
data |
BSt C12 53 |
=BStC1226: 800V |
17h$ |
|
S5800N, |
|
data |
|
|
|
|
|
|
(BStCC0253H, 17088)15 |
|
data |
BSt C30 26 |
400V, 1A(Ta=45ÊC), Igt/Ih<25/<80mA |
27b |
Sie |
|
data |
||
BSt C30 33 |
=BStC3026: 500V |
27b |
|
|
data |
||
BSt C30 40 |
=BStC3026: 600V |
27b |
|
|
data |
||
BSt C30 46 |
=BStC3026: 700V |
27b |
|
|
data |
||
BSt C30 53 |
=BStC3026: 800V |
27b |
|
|
data |
||
BSt C31 26 |
400V, 1,5A(Tc=85ÊC), Igt/Ih<25/<80mA |
28a |
Sie |
BStC3126M, |
|
data |
|
BSt C31 26 M |
400V, 2,5A(Tc=85ÊC),Igt/Ih<25/<80mA |
28a |
Sie |
|
data |
||
BSt C31 33 |
=BStC3126: 500V |
28a |
|
BStC3133M, |
|
data |
|
BSt C31 33 M |
=BStC3126M: 500V |
28a |
|
|
data |
||
BSt C31 40 |
=BStC3126: 600V |
28a |
|
BStC3140M, |
|
data |
|
BSt C31 40 M |
=BStC3126M: 600V |
28a |
|
|
data |
||
BSt C31 46 |
=BStC3126: 700V |
28a |
|
BStC3146M, |
|
data |
|
BSt C31 46 M |
=BStC3126M: 700V |
28a |
|
|
data |
||
BSt C31 53 |
=BStC3126: 800V |
28a |
|
BStC3153M, |
|
data |
|
BSt C31 53 M |
=BStC3126M: 800V |
28a |
|
|
data |
||
BSt CC01 26H |
22a$ |
Sie |
S6087B, TD3F400H, TD4F400H9 |
|
data |
||
BSt CC01 26R |
22a$ |
Sie |
S6087A, TD3F400R, TD4F400R9 |
|
data |
||
BSt CC01 33H |
=BStCC0126H: 500V |
22a$ |
|
S6087B, TD3F500H, TD4F500H9 |
|
data |
|
BSt CC01 33R |
=BStCC0126R: 500V |
22a$ |
|
S6087A, TD3F500R, TD4F500R9 |
|
data |
|
BSt CC01 40H |
=BStCC0126H: 600V |
22a$ |
|
S6087B, TD3F600H, TD4F600H9 |
|
data |
|
BSt CC01 40R |
=BStCC0126R: 600V |
22a$ |
|
S6087A, TD3F600R, TD4F600R9 |
|
data |
|
BSt CC01 46H |
=BStCC0126H: 700V |
22a$ |
|
S6087B, TD3F700H, TD4F700H9 |
|
data |
|
BSt CC01 46R |
=BStCC0126R: 700V |
22a$ |
|
S6087A, TD3F700R, TD4F700R9 |
|
data |
|
BSt CC01 53H |
=BStCC0126H: 800V |
22a$ |
|
TD3F800H, TD4F800H9 |
|
data |
|
BSt CC01 53R |
=BStCC0126R: 800V |
22a$ |
|
TD3F800R, TD4F800R9 |
|
data |
|
BSt CC02 33H |
17j$ |
Sie |
S3900E, 17088 |
|
data |
||
BSt CC02 33R |
17j$ |
Sie |
S3901E, 17089 |
|
data |
||
BSt CC02 40H |
=BStCC0233H: 600V |
17j$ |
|
S3900MF, 17088 |
|
data |
|
BSt CC02 40R |
=BStCC0233R: 600V |
17j$ |
|
S3901MF, 17089 |
|
data |
|
BSt CC02 46H |
=BStCC0233H: 700V |
17j$ |
|
S3900S, 17088 |
|
data |
|
|
|
|
|
|
|
|
|
— 178 —
Schrift N6.50, Schrift B8.00 |
02.08.2007 |
|
13:50:31 |
|
Art |
Kurzbeschreibung |
|
Herst. |
Vergleichstypen |
|
|
Typ |
Device |
Short description · Description succ. |
Bild |
Manu. |
Comparisontypes · Types d’equivalence |
|
more at |
Type · Tipo |
Genre · Tipo |
Descrizione somm. · Descripción breve |
Fig. |
Fabr. |
Tipi correspondenti · Tipos de repuesto |
www.ecadata.de |
|
|
Specie |
|
Prod. |
||||
|
|
|
|
|
|
||
BSt CC02 46R |
=BStCC0233R: 700V |
17j$ |
|
S3901S, 17089 |
|
data |
|
BSt CC02 53H |
=BStCC0233H: 800V |
17j$ |
|
17088 |
|
data |
|
BSt CC02 53R |
=BStCC0233R: 800V |
17j$ |
|
17089 |
|
data |
|
BSt CC02 60H |
=BStCC0233H: 900V |
17j$ |
|
17088 |
|
data |
|
BSt CC02 60R |
=BStCC0233R: 900V |
17j$ |
|
17089 |
|
data |
|
|
|
|
|
|
|
|
|
BSt D02 20 |
300V, 8,5A(Tc=82ÊC), Igt/Ih<50/120mA |
21b$ |
Sie |
BTW42/600R |
|
data |
|
BSt D02 40 |
=BStD0220: 600V |
21b$ |
|
BTW42/600R |
|
data |
|
BSt D02 60 |
=BStD0220: 900V |
21b$ |
|
BTW42/1000R |
|
data |
|
|
|
|
|
|
|
|
|
BSt D03 13 |
200V, 16A(Tc=85ÊC), Igt/Ih<30/<80mA |
21b$ |
Sie |
|
data |
||
BSt D03 26 |
=BStD0313: 400V |
21b$ |
|
|
data |
||
BSt D03 40 |
=BStD0313: 600V |
21b$ |
|
|
data |
||
BSt D03 53 |
=BStD0313: 800V |
21b$ |
|
|
data |
||
BSt D03 66 |
=BStD0313: 1000V |
21b$ |
|
|
data |
||
BSt D03 80 |
=BStD0313: 1200V |
21b$ |
|
|
data |
||
BSt D10 26 |
400V, 8A(Tc=85ÊC), Igt/Ih<25/<80mA |
17h$ |
Sie |
BStD1026M, TIC126D, T7,5N400, |
data |
||
BSt D10 26 M |
400V, 10A(Tc=85ÊC),Igt/Ih<25/<80mA |
17h$ |
Sie |
T9,5N400, |
|
data |
|
BSt D10 33 |
=BStD1026: 500V |
17h$ |
|
BStD1033M, TIC126E, T7,5N600, |
data |
||
BSt D10 33 M |
=BStD1026M: 500V |
17h$ |
|
T9,5N500, |
|
data |
|
BSt D10 40 |
=BStD1026: 600V |
17h$ |
|
BStD1040M, TIC126M, T7,5N600, |
data |
||
BSt D10 40 M |
=BStD1026M: 600V |
17h$ |
|
T9,5N600, |
|
data |
|
BSt D10 46 |
=BStD1026: 700V |
17h$ |
|
BStD1046M, TIC126S, T7,5N700, |
data |
||
BSt D10 46 M |
=BStD1026M: 700V |
17h$ |
|
T9,5N700, |
|
data |
|
BSt D10 53 |
=BStD1026: 800V |
17h$ |
|
BStD1052M, TIC126N, T7,5N800, |
data |
||
BSt D10 53 M |
=BStD1026M: 800V |
17h$ |
|
T9,5N800, |
|
data |
|
BSt D16 66 M |
1000V, 7,5A(Tc=85ÊC), Igt/Ih<10/<50mA |
17h$ |
Sie |
- |
|
data |
|
BSt D16 66 N |
=BStD1666M: Igt/Ih<20/<80mA |
17h$ |
Sie |
- |
|
data |
|
BSt D16 66 P |
=BStD1666M: Igt/Ih<50/<150mA |
17h$ |
|
- |
|
data |
|
BSt D16 80 M |
=BStD1666M: 1200V |
17h$ |
|
- |
|
data |
|
BSt D16 80 N |
=BStD1680M: Igt/Ih<20/<80mA |
17h$ |
|
- |
|
data |
|
BSt D16 80 P |
=BStD1680M: Igt/Ih<50/<150mA |
17h$ |
|
- |
|
data |
|
|
|
|
|
|
|
|
|
BSt D36 66 M |
1000V, 1A(Ta=45ÊC),Igt/Ih<10/<50mA |
27b |
Sie |
(BStD1666M)4 |
|
data |
|
BSt D36 66 N |
=BStD3666M: Igt/Ih<20/<80mA |
27b |
|
(BStD1666N)4 |
|
data |
|
BSt D36 66 P |
=BStD3666M: Igt/Ih<50/<150mA |
27b |
|
(BStD1666P)4 |
|
data |
|
BSt D36 80 M |
=BStD3666M: 1200V |
27b |
|
(BStD1680M)4 |
|
data |
|
BSt D36 80 N |
=BStD3680M: Igt/Ih<20/<80mA |
27b |
|
(BStD1680N)4 |
|
data |
|
BSt D36 80 P |
=BStD3680M: Igt/Ih<50/<150mA |
27b |
|
(BStD1680P)4 |
|
data |
|
BSt D40 26 |
400V, 12A, Igt<10mA |
29b |
Sie |
T10N400H, S6200D, BStD4026M, C232D9 |
|
data |
|
BSt D40 26 M |
400V, 15A, Igt<10mA |
29b |
Sie |
C 232D9 |
|
data |
|
BSt D40 33 |
=BStD4026: 500V |
29b |
|
T10N500H, S6200M, BStD4033M, C232E9 |
|
data |
|
BSt D40 33 M |
=BStD4026M: 500V |
29b |
|
C 232M9 |
|
data |
|
BSt D40 40 |
=BStD4026: 600V |
29b |
|
T10N600H, S6200M, BStD4040M, C232M9 |
|
data |
|
BSt D40 40 M |
=BStD4026M: 600V |
29b |
|
C 232M9 |
|
data |
|
BSt D40 46 |
=BStD4026: 700V |
29b |
|
T10N700H, BStD4046M9 |
|
data |
|
BSt D40 46 M |
=BStD4026M: 700V |
29b |
|
|
data |
||
BSt D40 53 |
=BStD4026: 800V |
29b |
|
T10N800H, BStD4053M9 |
|
data |
|
BSt D40 53 M |
=BStD4026M: 800V |
29b |
|
- |
|
data |
|
BSt D41 26 |
=BStD4026: |
21b$ |
|
T10N400C, S6210D, BStD4126M, BStE4126,++9 |
data |
||
BSt D41 26 M |
=BStD4026M: |
21b$ |
|
C230D, BStE4126, BStE4126M9 |
|
data |
|
BSt D41 33 |
=BStD4033: |
21b$ |
|
T10N500C, S6210M, BStD4133M, BStE4133,++9 |
data |
||
BSt D41 33 M |
=BStD4033M: |
21b$ |
|
C230E, BStE4133, BStE4133M9 |
|
data |
|
BSt D41 40 |
=BStD4040: |
21b$ |
|
T10N600C, S6210M, BStD4140M, BStE4140,++9 |
data |
||
BSt D41 40 M |
=BStD4040M: |
21b$ |
|
C230M, BStE4140, BStE4140M9 |
|
data |
|
BSt D41 46 |
=BStD4046: |
21b$ |
|
T10N700C, BStD4146M, BStE4146, BStE4146M9 data |
|||
BSt D41 46 M |
=BStD4046M: |
21b$ |
|
BStE4146, BStE4146M9 |
|
data |
|
BSt D41 53 |
=BStD4053: |
21b$ |
|
T10N800C, BStD4153M, BStE4153, BStE4153M9 data |
|||
BSt D41 53 M |
=BStD4053M: |
21b$ |
|
BStE4153, BStE4153M9 |
|
data |
|
BSt E03 26 |
400V, 0,6A(Ta=45ÊC),Igt/Ih<35/<50mA |
27b |
Sie |
(S5800D, BT153, |
|||
BSt E03 33 |
=BStE0326: 500V |
27b |
|
(S5800E, BT153, |
|||
BSt E03 40 |
=BStE0326: 600V |
27b |
|
(S5800M, |
|
data |
|
BSt E03 46 |
=BStE0326: 700V |
27b |
|
(S5800S, |
|
data |
|
BSt E04 26 |
400V, 4A(Tc=77ÊC),Igt/Ih<50/<100mA |
22a$ |
Sie |
T3S400, |
|
data |
|
BSt E04 33 |
=BStE0426: 500V |
22a$ |
|
T3S500, |
|
data |
|
BSt E04 40 |
=BStE0426: 600V |
22a$ |
|
T3S600, |
|
data |
|
BSt E04 46 |
=BStE0426: 700V |
22a$ |
|
T3S700, |
|
data |
|
BSt E40 26 |
400V, 18A, Igt<50mA |
29b |
Sie |
BStE4026M9 |
|
data |
|
BSt E40 26 M |
400V, 22A, Igt<50mA |
29b |
Sie |
- |
|
data |
|
BSt E40 33 |
=BStE4026: 500V |
29b |
|
BStE4033M9 |
|
data |
|
BSt E40 33 M |
=BStE4026M: 500V |
29b |
|
- |
|
data |
|
BSt E40 40 |
=BStE4026: 600V |
29b |
|
BStE4040M9 |
|
data |
|
BSt E40 40 M |
=BStE4026M: 600V |
29b |
|
- |
|
data |
|
BSt E40 46 |
=BStE4026: 700V |
29b |
|
BStE4046M9 |
|
data |
|
BSt E40 46 M |
=BStE4026M: 700V |
29b |
|
- |
|
data |
|
BSt E40 53 |
=BStE4026: 800V |
29b |
|
BStE4053M9 |
|
data |
|
BSt E40 53 M |
=BStE4026M: 800V |
29b |
|
|
data |
||
BSt E41 26 |
=BStE4026: |
21b$ |
|
data |
|||
BSt E41 26 M |
=BStE4026M: |
21b$ |
|
T17N400, T24N400, TAG24N400, |
data |
||
BSt E41 33 |
=BStE4033: |
21b$ |
|
data |
|||
BSt E41 33 M |
=BStE4033M: |
21b$ |
|
T17N600, T24N600, TAG24N600, |
data |
||
BSt E41 40 |
=BStE4040: |
21b$ |
|
data |
|||
BSt E41 40 M |
=BStE4040M: |
21b$ |
|
T17N600, T24N600, TAG24N600, |
data |
||
BSt E41 46 |
=BStE4046: |
21b$ |
|
data |
|||
|
|
|
|
|
|
|
|
— 179 —
Schrift N6.50, Schrift B8.00 |
02.08.2007 |
|
13:50:31 |
|
Art |
Kurzbeschreibung |
|
Herst. |
Vergleichstypen |
|
Typ |
Device |
Short description · Description succ. |
Bild |
Manu. |
Comparisontypes · Types d’equivalence |
more at |
Type · Tipo |
Genre · Tipo |
Descrizione somm. · Descripción breve |
Fig. |
Fabr. |
Tipi correspondenti · Tipos de repuesto |
www.ecadata.de |
|
Specie |
|
Prod. |
|||
|
|
|
|
|
||
IR 2136 |
MOSFET Gate Drv,Uoffs=600V, 0,12/0,25A |
Inr |
- |
|||
|
|
|
|
|
|
|
IR 2137 |
MOSFET Gate Drv, Uoffs=600V, 0,2/0,46A |
Inr |
- |
|||
|
|
|
|
|
|
|
IR 2151 |
MOSFET Gate Drv, Uoffs=600V, 0,1/0,21A |
Inr |
- |
|||
IR 2152 |
MOSFET Gate Drv, Uoffs=600V, 0,1/0,21A |
Inr |
- |
|||
IR 2153 |
MOSFET Gate Drv, Uoffs=600V, 0,2/0,4A |
Inr |
- |
|||
IR 2154 |
MOSFET Gate Drv, Uoffs=600V |
Inr |
- |
|||
IR 2154 S |
SMD,MOSFET Gate Drv, Uoffs=600V |
|
- |
|
||
IR 2155 |
MOSFET Gate Driver, |
Inr |
- |
|||
IR 2157 |
600V Ballast Control |
Inr |
- |
|
||
IR 2157 S |
SMD,600V Ballast Control |
|
- |
|
||
IR 2159 |
600V Dimming Ballast Control |
Inr |
- |
|
||
IR 2159 S |
SMD,600V Dimming Ballast Control |
|
- |
|||
|
|
|
|
|
|
|
IR 2213 |
MOSFET Gate Drv, Uoffs=1200V, 1,7/2A |
Inr |
- |
|
||
IR 2213 S |
SMD,MOSFET Gate Drv, Uoffs=1200V |
|
- |
|
||
IR 2233 |
MOSFET Gate Drv,Uoffs=1200V, 0,2/0,42A |
Inr |
- |
|||
IR 2235 |
MOSFET Gate Drv,Uoffs=1200V, 0,2/0,42A |
Inr |
- |
|||
|
|
|
|
|
|
|
IR |
IC |
|
|
|
- |
|
|
|
|
|
|
|
|
IR 3220 S /8 |
IC |
PROTECTED |
TSOP |
Inr |
- |
pdf pinout |
IR 6000 |
|
Inr |
- |
|
||
|
|
|
|
|
|
|
IR 6210 |
Intelligent High Side MOSFET Power Sw. |
86/5Pin |
Inr |
- |
||
|
|
5¼50V, 28W, on=0,2ê, Ilim=5A |
|
|
|
|
IR 6216 |
Intelligent High Side MOSFET Power Sw. |
86/5Pin |
Inr |
- |
||
|
|
5¼50V, 28W, on=0,2ê, Ilim=10A |
|
|
|
|
IR 6220 |
Intelligent High Side MOSFET Power Sw. |
86/5Pin |
Inr |
- |
||
|
|
5¼50V, 28W, on=0,1ê, Ilim=10A |
|
|
|
|
IR 6224 |
Intelligent High Side MOSFET Power Sw. |
86/5Pin |
Inr |
- |
||
|
|
5¼50V, 28W, on=0,1ê, Ilim=20A |
|
|
|
|
IR 6226 |
Intelligent High Side MOSFET Power Sw. |
86/5Pin |
Inr |
- |
||
|
|
5¼50V, 28W, on=0,1ê, Ilim=20A |
|
|
|
|
|
|
|
|
|
|
|
IR 6311 G |
Intelligent High Side MOSFET Power Sw. |
Inr |
- |
|
||
|
|
5¼50V, on=0,15ê, Ilim=5A |
|
|
|
|
IR 6320 G |
Intelligent High Side MOSFET Power Sw. |
Inr |
- |
|
||
|
|
5¼50V, on=85mê, Ilim=10A |
|
|
|
|
|
|
|
|
|
|
|
IR 9161 |
Quad, ±18V, 0¼+70Ê |
Sha |
- |
|
||
IR 9161 N |
=IR 9161: SMD |
|
- |
|
||
|
|
|
|
|
|
|
IR 9331 |
Sha |
- |
|
|||
IR 9331 N |
SMD, |
|
- |
|
||
|
|
|
|
|
|
|
IR 9431 |
Regler/shunt reg., Uref=2,5V |
Sha |
- |
|
||
IR 9494 |
Sha |
- |
|
|||
IR 9494 N |
=IR 9494: SMD |
|
- |
|
||
|
|
|
|
|
|
|
IR 21014 |
MOSFET Gate Drv, Uoffs=600V, 0,1/0,21A |
Inr |
- |
|||
IR 21014 S |
SMD,MOSFET Gate Drv, Uoffs=600V |
|
- |
|
||
IR 21024 |
MOSFET Gate Drv, Uoffs=600V, 0,1/0,21A |
Inr |
- |
|||
IR 21024 S |
SMD,MOSFET Gate Drv, Uoffs=600V |
|
- |
|
||
IR 21034 |
MOSFET Gate Drv, Uoffs=600V, 0,1/0,21A |
Inr |
- |
|
||
IR 21034 S |
SMD,MOSFET Gate Drv, Uoffs=600V |
|
- |
|
||
IR 21044 |
MOSFET Gate Drv, Uoffs=600V, 0,1/0,21A |
Inr |
- |
|
||
IR 21044 S |
SMD,MOSFET Gate Drv, Uoffs=600V |
|
- |
|
||
IR 21064 |
MOSFET Gate Drv,Uoffs=600V, 0,12/0,25A |
Inr |
- |
|||
IR 21064 S |
SMD,MOSFET Gate Drv,Uoffs=600V |
|
- |
|||
IR 21074 |
MOSFET Gate Drv,Uoffs=600V, 0,12/0,25A |
Inr |
- |
|
||
IR 21074 S |
SMD,MOSFET Gate Drv,Uoffs=600V |
|
- |
|
||
IR 21084 |
MOSFET Gate Drv,Uoffs=600V, 0,12/0,25A |
Inr |
- |
|||
IR 21084 S |
SMD,MOSFET Gate Drv,Uoffs=600V |
|
- |
|
||
IR 21094 |
MOSFET Gate Drv,Uoffs=600V, 0,12/0,25A |
Inr |
- |
|||
IR 21094 S |
SMD,MOSFET Gate Drv,Uoffs=600V |
|
- |
|
||
IR 21362 |
MOSFET Gate Drv,Uoffs=600V, 0,12/0,25A |
Inr |
- |
|||
|
|
|
|
|
|
|
IR 21531(D) |
MOSFET Gate Drv, Uoffs=600V |
Inr |
- |
|
||
IR 21531(D)S |
SMD,MOSFET Gate Drv, Uoffs=600V |
|
- |
|
||
IR 21541 |
MOSFET Gate Drv, Uoffs=600V |
Inr |
- |
|
||
IR 21541 S |
SMD,MOSFET Gate Drv, Uoffs=600V |
|
- |
|
||
|
|
|
|
|
|
|
IR 3220 S /20 |
IC |
PROTECTED |
TSOP |
Inr |
- |
pdf pinout |
IRC 150 |
23/4Pin |
Inr |
- |
data |
||
IRC 250 |
23/4Pin |
Inr |
- |
data |
||
IRC 254 |
23/4Pin |
Inr |
- |
data |
||
IRC 350 |
23/4Pin |
Inr |
- |
data |
||
IRC 450 |
23/4Pin |
Inr |
- |
data |
||
|
|
|
|
|
|
|
IRC 530 |
86/5Pin |
Inr |
- |
data pdf |
||
IRC 531 |
=IRC 530: 80V |
86/5Pin |
Inr |
- |
data |
|
IRC 540 |
86/5Pin |
Inr |
- |
data pdf |
||
IRC 630 |
86/5Pin |
Inr |
- |
data pdf |
||
IRC 634 |
86/5Pin |
Inr |
- |
data pdf |
||
IRC 640 |
86/5Pin |
Inr |
- |
data pdf |
||
IRC 644 |
86/5Pin |
Inr |
- |
data pdf |
||
|
|
|
|
|
|
|
IRC 730 |
86/5Pin |
Inr |
- |
data pdf |
||
|
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|
|
|
|
— 428 —
Schrift N6.50, Schrift B8.00 |
02.08.2007 |
|
13:50:48 |
|
Art |
Kurzbeschreibung |
|
Herst. |
Vergleichstypen |
|
|
Typ |
Device |
Short description · Description succ. |
Bild |
Manu. |
Comparisontypes · Types d’equivalence |
|
more at |
Type · Tipo |
Genre · Tipo |
Descrizione somm. · Descripción breve |
Fig. |
Fabr. |
Tipi correspondenti · Tipos de repuesto |
www.ecadata.de |
|
|
Specie |
|
Prod. |
||||
|
|
|
|
|
|
||
IRC 740 |
86/5Pin |
Inr |
- |
|
data pdf |
||
IRC 830 |
86/5Pin |
Inr |
- |
|
data pdf |
||
IRC 832 |
86/5Pin |
Inr |
- |
|
data |
||
|
|
|
|
|
|
|
|
IRC 840 |
86/5Pin |
Inr |
- |
|
data pdf |
||
|
|
|
|
|
|
|
|
IRCP 054 |
85/5Pin |
Inr |
- |
|
data pdf |
||
IRCZ 24 |
86/5Pin |
Inr |
- |
|
data pdf |
||
IRCZ 34 |
86/5Pin |
Inr |
- |
|
data pdf |
||
IRCZ 44 |
86/5Pin |
Inr |
- |
|
data pdf |
||
|
|
|
|
|
|
|
|
IRD |
35 |
Hit |
→2SA1484 |
|
data |
||
IRE |
35 |
Hit |
→2SA1484 |
|
data |
||
|
|
|
|
|
|
|
|
IRF 9 Z10 |
17c$ |
Inr,Sam |
BUZ 171¼172, IRF 9521, 2SJ102, 2SJ153 |
|
data |
||
IRF 9 Z12 |
17c$ |
Inr,Sam |
→IRF 9Z10 |
|
data |
||
IRF 9 Z14 |
17c$ |
Inr,Sam |
IRF 9630¼33, MTP 8P08, 2SJ247 |
|
data pdf |
||
IRF 9 Z14L,S |
=IRF 9Z14: |
30c$ |
|
2SJ266 |
|
data |
|
IRF 9 Z15 |
17c$ |
Inr,Sam |
→IRF 9Z14 |
|
data |
||
IRF 9 Z20 |
17c$ |
Inr,Sam |
IRF 9531, IRF 9533, 2SJ122¼123, 2SJ169+ |
|
data |
||
IRF 9 Z22 |
17c$ |
Inr,Sam |
→IRF 9Z20 |
|
data |
||
IRF 9 Z24 |
17c$ |
Inr,Sam |
IRF 9530¼31, 2SJ122¼123, 2SJ169, ++ |
|
data pdf |
||
IRF 9 Z24L,S |
=IRF 9Z24: |
30c$ |
|
2SJ219, 2SJ268, 2SJ296, 2SJ384 |
|
data |
|
IRF 9 Z24N |
17c$ |
Inr |
IRF 9530¼31, 2SJ122, 2SJ140, 2SJ169, ++ |
|
data pdf |
||
IRF 9 Z24NL,NS |
=IRF 9Z24N: |
30c$ |
|
2SJ219, 2SJ268, 2SJ296, 2SJ384 |
|
data |
|
IRF 9 Z25 |
17c$ |
Inr,Sam |
→IRF 9Z24 |
|
data |
||
IRF 9 Z30 |
17c$ |
Inr,Sam |
BUZ 271, IRF 9541, 2SJ174, 2SJ291 |
|
data |
||
IRF 9 Z32 |
17c$ |
Inr,Sam |
→IRF 9Z30 |
|
data |
||
IRF 9 Z34 |
17c$ |
Inr,Sam |
IRF 9540¼41, 2SJ174, 2SJ291 |
|
data |
||
IRF 9 Z34N |
17c$ |
Inr |
IRF 9540¼41, 2SJ174, 2SJ291 |
|
data pdf |
||
IRF 9 Z34(N)L,S |
=IRF 9Z34¼: |
30c$ |
|
2SJ220, 2SJ241, 2SJ297, 2SJ401 |
|
data |
|
IRF 9 Z35 |
17c$ |
Inr,Sam |
→IRF 9Z34 |
|
data |
||
|
|
|
|
|
|
|
|
IRF 034 |
23a$ |
Inr |
BUZ 24, 2N6763, 2SK561, 2SK906, 2SK1429+ |
|
data pdf |
||
IRF 035 |
23a$ |
Inr |
BUZ 24, 2N6763, 2SK561, 2SK906, 2SK1429+ |
|
data |
||
IRF 044 |
23a$ |
Inr |
BUZ 24, 2N6764, 2SK561, 2SK906, 2SK1429+ |
|
data pdf |
||
IRF 045 |
23a$ |
Inr |
BUZ 24, 2N6764, 2SK561, 2SK906, 2SK1429+ |
|
data |
||
|
|
|
|
|
|
||
IRF 120 |
23a$ |
Inr,Fch,Sam |
MTM 12N10, 2N6765, 2SK398¼399, 2SK405++ |
data pdf |
|||
IRF 121 |
=IRF 120: 80V |
23a$ |
Inr,Fch,Sam |
MTM 12N08, 2N6765, 2SK398¼399, 2SK405++ |
data pdf |
||
IRF 122 |
23a$ |
Inr,Fch,Sam |
MTM 12N10, 2N6765, 2SK398¼399, 2SK405++ |
data pdf |
|||
IRF 123 |
=IRF 122: 80V |
23a$ |
Inr,Fch,Sam |
MTM 12N08, 2N6765, 2SK398¼399, 2SK405++ |
data pdf |
||
|
|
|
|
|
|
|
|
IRF 130 |
23a$ |
Inr,Sam++ |
BUZ 36, MTM 12N10, 2N6765, 2SK572 |
|
data pdf |
||
IRF 131 |
=IRF 130: 80V |
23a$ |
Inr,Sam++ |
BUZ 36, MTM 12N08, 2N6765, 2SK572 |
|
data pdf |
|
IRF 132 |
23a$ |
Inr,Sam++ |
BUZ 36, MTM 12N10, 2N6765, 2SK572 |
|
data pdf |
||
IRF 133 |
=IRF 132: 80V |
23a$ |
Inr,Sam++ |
BUZ 36, MTM 12N08, 2N6765, 2SK572 |
|
data pdf |
|
|
|
|
|
|
|
|
|
IRF 140 |
23a$ |
Inr,Sam++ |
BUZ 24, BUZ 349, 2N6764, 2SK906, 2SK1433 |
|
data pdf |
||
IRF 141 |
=IRF 140: 80V |
23a$ |
Inr,Sam++ |
BUZ 24, BUZ 349, 2N6764, 2SK906, 2SK1433 |
|
data pdf |
|
IRF 142 |
23a$ |
Inr,Sam++ |
BUZ 24, BUZ 349, 2N6764, 2SK906, 2SK1433 |
|
data pdf |
||
IRF 143 |
=IRF 142: 80V |
23a$ |
Inr,Sam++ |
BUZ 24, BUZ 349, 2N6764, 2SK906, 2SK1433 |
|
data pdf |
|
IRF 150 |
23a$ |
Inr,Sam++ |
BUZ 24, BUZ 349, 2N6764, 2SK906, 2SK1433 |
|
data pdf |
||
IRF 151 |
=IRF 150: 60V |
23a$ |
Inr,Sam++ |
BUZ 24, BUZ 349, 2N6763, 2SK906, 2SK1433 |
|
data pdf |
|
IRF 152 |
23a$ |
Inr,Sam++ |
BUZ 24, BUZ 349, 2N6764, 2SK906, 2SK1433 |
|
data pdf |
||
IRF 153 |
=IRF 152: 60V |
23a$ |
|
BUZ 24, BUZ 349, 2N6763, 2SK906 |
|
data pdf |
|
|
|
|
|
|
|
|
|
IRF 220 |
23a$ |
Inr,Fch,Sam |
BUZ 63, MTM 8N20, 2SK400 |
|
data pdf |
||
IRF 221 |
=IRF 220: 150V |
23a$ |
Inr,Fch,Sam |
BUZ 63, MTM 8N18, 2SK400 |
|
data pdf |
|
IRF 222 |
23a$ |
Inr,Fch,Sam |
BUZ 63, MTM 8N20, 2SK400 |
|
data pdf |
||
IRF 223 |
=IRF 222: 150V |
23a$ |
Inr,Fch,Sam |
BUZ 63, MTM 8N18, 2SK400 |
|
data pdf |
|
|
|
|
|
|
|
|
|
IRF 224 |
23a$ |
Inr |
BUZ 63, 2SK259¼260, 2SK2264 |
|
data |
||
IRF 225 |
23a$ |
Inr |
BUZ 63, 2SK259¼260, 2SK2264 |
|
data |
||
IRF 230 |
23a$ |
Inr,Sam++ |
MTM 8N20, 2SK400¼401, 2SK412 |
|
data pdf |
||
IRF 231 |
=IRF 230: 150V |
23a$ |
Inr,Sam++ |
MTM 8N18, 2SK400¼401, 2SK412 |
|
data pdf |
|
IRF 232 |
23a$ |
Inr,Sam++ |
MTM 8N20, 2SK400¼401, 2SK412 |
|
data pdf |
||
IRF 233 |
=IRF 232: 150V |
23a$ |
Inr,Sam++ |
MTM 8N18, 2SK400¼401, 2SK412 |
|
data pdf |
|
IRF 234 |
23a$ |
Inr |
BUZ 64, BUZ 325, 2SK293, 2SK501, ++ |
|
data pdf |
||
IRF 235 |
23a$ |
Inr |
BUZ 64, BUZ 325, 2SK293, 2SK501, ++ |
|
data pdf |
||
IRF 236 |
=IRF 234: 275V |
23a$ |
Inr |
BUZ 64, BUZ 325, 2SK293, 2SK501, ++ |
|
data pdf |
|
IRF 237 |
=IRF 235: 275V |
23a$ |
Inr |
BUZ 64, BUZ 325, 2SK293, 2SK501, ++ |
|
data pdf |
|
|
|
|
|
|
|
|
|
IRF 240 |
23a$ |
Inr,Sam++ |
BUZ 36, BUZ 350, MTM 15N20, 2SK901 |
|
data pdf |
||
IRF 241 |
=IRF 240: 150V |
23a$ |
Inr,Sam++ |
BUZ 36, BUZ 350, MTM 15N20, 2SK901 |
|
data pdf |
|
IRF 242 |
23a$ |
Inr,Sam++ |
BUZ 36, BUZ 350, MTM 15N20, 2SK901 |
|
data pdf |
||
IRF 243 |
=IRF 242: 150V |
23a$ |
Inr,Sam++ |
BUZ 36, BUZ 350, MTM 15N20, 2SK901 |
|
data pdf |
|
|
|
|
|
|
|
|
|
IRF 244 |
23a$ |
Inr |
BUZ 323, 2SK559¼560, 2SK573, 2SK1135,++ |
|
data pdf |
||
IRF 245 |
23a$ |
Inr |
BUZ 323, 2SK559¼560, 2SK573, 2SK1135,++ |
|
data pdf |
||
IRF 246 |
=IRF 244: 275V |
23a$ |
Inr |
BUZ 323, 2SK559¼560, 2SK868, 2SK1401,++ |
|
data pdf |
|
IRF 247 |
=IRF 245: 275V |
23a$ |
Inr |
BUZ 323, 2SK559¼560, 2SK868, 2SK1401 |
|
data pdf |
|
|
|
|
|
|
|
|
|
IRF 250 |
23a$ |
Inr,Sam++ |
BUZ 341, 2N6766, 2SK851, 2SK902, 2SK1492 |
|
data pdf |
||
IRF 251 |
=IRF 250: 150V |
23a$ |
Inr,Sam++ |
BUZ 341, 2N6766, 2SK851, 2SK902, 2SK1492 |
|
data pdf |
|
IRF 252 |
23a$ |
Inr,Sam++ |
BUZ 341, 2N6766, 2SK851, 2SK902, 2SK1492 |
|
data pdf |
||
IRF 253 |
=IRF 250: 150V |
23a$ |
Inr,Sam++ |
BUZ 341, 2N6766, 2SK851, 2SK902, 2SK1492 |
|
data pdf |
|
IRF 254 |
23a$ |
Inr,Sam |
2SK623, 2SK901, 2SK944, 2SK1641, 2SK2007 |
|
data |
||
IRF 255 |
23a$ |
Inr,Sam |
2SK623, 2SK901, 2SK944, 2SK1641, 2SK2007 |
|
data |
||
|
|
|
|
|
|
|
|
— 429 —
Schrift N6.50, Schrift B8.00 |
02.08.2007 |
|
13:50:48 |
2,9 x 1,5 mm |
2,9 x 1,5 mm |
||
2 x 1,25 mm |
2 x 1,25 mm |
||
|
|
|
|
Fig.47 |
(von oben/ |
top view) |
Fig.87 |
(von oben/ |
CSP |
top view) |
GRID |
|
LPP |
|
SMDIP: 1,0mm |
|
HSMDIP: 0,8mm |
|
SSMDIP: 0,65mm |
|
VSMDIP: 0,45mm |
|
MLP |
|
QFN |
TSOP |
|
Transistor |
|
|
|
|
|
Darlington |
|
|
|
|
|
FET |
|
|
||||||||
|
1 |
2 |
3 |
4 |
1 |
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2 |
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3 |
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4 |
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1 |
2 |
3 |
4 |
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||
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a |
E |
B |
C |
|
E2 |
B1 |
C1/2 |
|
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|
S |
G |
D |
|
a |
|||||||
b |
E |
C |
B |
|
E2 |
C1/2 |
B1 |
|
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S |
D |
G |
|
b |
|||||||
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c |
B |
C |
E |
|
B1 |
C1/2 |
E2 |
|
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|
G |
D |
S |
|
c |
|||||||
d |
B |
E |
C |
|
- |
|
|
- |
|
|
- |
|
|
|
|
|
|
G |
S |
D |
|
d |
|
e |
C |
B |
E |
|
C1/2 |
B1 |
E2 |
|
|
|
|
D |
G |
S |
|
e |
|||||||
f |
C |
E |
B |
|
- |
|
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- |
|
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- |
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D |
S |
G |
|
f |
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g |
E |
B |
C |
Geh |
E2 |
B1 |
C1/2 |
Geh |
S |
G |
D |
Sub |
g |
||||||||||
h |
E |
C |
B |
Geh |
E2 |
C1/2 |
B1 |
Geh |
S |
D |
G |
Sub |
h |
||||||||||
j |
B |
C |
E |
Geh |
B1 |
C1/2 |
E2 |
Geh |
G |
D |
S |
Sub |
j |
||||||||||
k |
B |
E |
C |
Geh |
- |
|
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- |
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- |
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- |
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- |
- |
- |
- |
k |
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l |
C |
B |
E |
Geh |
- |
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- |
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- |
|
|
- |
|
|
|
D |
G |
S |
Sub |
l |
|
m |
C |
B |
E |
C |
- |
|
|
- |
|
|
- |
|
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- |
|
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|
D |
S |
G |
Sub |
m |
|
n |
E |
B |
Geh |
C |
C1 |
E1/B2 |
E2 |
|
|
|
|
D |
G |
Sub |
S |
n |
|||||||
o |
E |
C |
Geh |
B |
- |
|
|
- |
|
|
- |
|
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- |
|
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D |
S |
Sub |
G |
o |
|
p |
C |
Geh |
E |
B |
- |
|
|
- |
|
|
- |
|
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- |
|
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G |
Sub |
S |
D |
p |
|
q |
C |
C |
E |
B |
- |
|
|
- |
|
|
- |
|
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- |
|
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S |
D |
G |
G |
q |
|
r |
E |
C |
E |
B |
E2 |
B1 |
C1/2 |
E1/B2 |
S |
G1 |
D |
G2 |
r |
||||||||||
s |
E |
B |
E |
C |
E2 |
B1 |
E1/B2 |
C1/2 |
S |
G1 |
G2 |
D |
s |
||||||||||
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t |
E |
C |
B |
C |
E2 |
E1/B2 |
B1 |
C1/2 |
D |
G2 |
G1 |
S/Sub |
t |
||||||||||
u |
E |
B |
C |
B |
B2 |
E1/2 |
C2/B1 |
C1 |
G1 |
G2 |
D |
S/Sub |
u |
||||||||||
v |
B |
C |
B |
E |
C1/2 |
E1/B2 |
B1 |
E2 |
S |
D |
G2 |
G1 |
v |
||||||||||
w |
B |
E |
B |
C |
B2 |
E1/2 |
C1 |
C2/B1 |
G1 |
G2 |
S |
D |
w |
||||||||||
x |
E |
B |
C |
E |
E2 |
B1 |
C1/2 |
E2 |
D |
S |
G1 |
G2 |
x |
||||||||||
y |
E1 |
B |
E2 |
C |
- |
|
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- |
|
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- |
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- |
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S |
G |
S |
D |
y |
|
z |
E1 |
B |
C |
E2 |
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S |
D |
S |
G |
z |
za |
B |
E |
C |
E |
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G |
S |
D |
S |
za |
zb |
E/K |
C |
A |
B |
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G |
|
D |
S |
zb |
zc |
E2 |
E1 |
C1 |
B1/2 C2 |
|
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|
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|
|
|
C1/2 |
G2 |
D |
S |
G1 |
zc |
|||||
zd |
input |
US |
output |
Gnd |
B1 |
|
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|
G2 |
D |
G1 |
S |
zd |
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|||||||||||
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|||||||||||
ze |
C |
E |
B |
E |
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S |
S |
G |
D |
ze |
|
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||||||||||
zf |
C |
B |
E |
B |
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G |
- |
S |
D |
zf |
|
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||||||||||
zg |
C |
|
B |
E |
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G |
D |
S |
D |
zg |
zh |
B |
|
E |
C |
|
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G |
S |
S |
D |
zh |
|
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|
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|
|||||||||
zj |
E1/2 |
C2 |
B1/2 |
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Geh/case/boîte/invol. |
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Geh/case/boîte/invol. |
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Gehäuse/case/boîtier/involucro |
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Masse/ground/commun/massa |
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Diode |
Thyristor,Triac*, PUT |
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aa |
K1 |
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K2 |
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ab |
A1 |
- |
A2 |
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ac |
A1 |
- |
K2 |
K1/A2 |
al |
A |
K |
A |
K |
b |
K |
A |
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b1 |
A1/K2 |
A2/K1 |
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b2 |
K |
A |
K |
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c |
A |
- |
K |
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c1 |
A |
A |
K |
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c2 |
A1/K2 |
- |
A2/K1 |
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c3 |
K2 |
- |
A1 |
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d |
K |
- |
A |
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d1 |
K |
K |
A |
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e |
- |
A |
K |
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f |
- |
K |
A |
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g |
A |
K |
Geh |
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h |
K |
A |
Geh |
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j |
A |
K |
A |
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j3 |
A |
K |
- |
K |
j4 |
- |
A |
K |
A |
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j5 |
A1 |
A2 |
A1 |
A2 |
j6 |
A1/A2 |
K1 |
K2 |
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j7 |
K1/K2 |
A1 |
A2 |
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j8 |
A1/K2 |
K1 |
A2 |
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l |
A1 |
A2 |
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l1 |
A2 |
A1 |
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l2 |
A1 |
- |
A2 |
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m |
K1 |
K2 |
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m1 |
K2 |
K1 |
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m2 |
K1 |
A1/2 |
K2 |
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n |
A1 |
K2 |
A2/K1 |
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n1 |
A1 |
A2/K1 |
K2 |
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n2 |
A2/K1 |
K2 |
A1 |
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o |
K1 |
A2 |
A1/K2 |
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o1 |
K1 |
A1/K2 |
A2 |
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o2 |
K2 |
A1 |
A2/K1 |
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o4 |
K1 |
A1/K2 |
A2 |
A1/K2 |
o5 |
A1 |
K1/K2 |
A2 |
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p |
A2 |
A1 |
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q |
K2 |
K1 |
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r |
A1 |
A2 |
A3 |
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r1 |
A1 |
A2 |
A3 |
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r2 |
A1 |
A2 |
A3 |
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r3 |
K1 |
K2 |
K3 |
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s |
K1 |
K2 |
K3 |
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s0 |
A1 |
K1 |
K2 |
A2 |
s1 |
K1 |
K2 |
K3 |
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s2 |
A1 |
A2 |
K2 |
K1 |
s3 |
K1 |
A1 |
A2 |
K2 |
s4 |
K1 |
K2 |
A2 |
A1 |
s5 |
K1 |
K2 |
A1 |
A2 |
s6 |
K1 |
A2 |
K2 |
A1 |
s7 |
A1 |
A2 |
K1 |
K2 |
s8 |
A1 |
K2 |
K1 |
A2 |
s9 |
A1 |
K2 |
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K1 |
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K |
- |
A |
Geh |
t1 |
A |
- |
K |
Geh |
t2 |
n.c. |
- |
A |
K |
t3 |
n.c. |
K |
A |
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t4 |
A |
- |
A |
K |
t5 |
K |
- |
A |
K |
u |
A2/K1 |
A1 |
Geh |
K2 |
u1 |
A2/K1 |
K2 |
Geh |
A1 |
v |
A |
A |
K |
K |
v1 |
K |
K |
A |
A |
w |
~ |
- |
~ |
+ |
x |
- |
~ |
+ |
~ |
x1 |
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~ |
~ |
- |
x2 |
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~ |
~ |
x3 |
+ |
~ |
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x4 |
- |
~ |
~ |
+ |
x5 |
- |
+ |
~ |
~ |
x6 |
~ |
+ |
~ |
- |
x7 |
~ |
~ |
+ |
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y |
A1/K4 |
A2/K1 |
A3/K2 |
A4/K3 |
zAufdruckImprint Impr.
Weitere Pincode linke Seite
Continuation on the left side
K1...3 |
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s, s1, cd, cf, ch, ck, db |
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n, n1, o, o1, u, u1, bm, cm, bo |
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UJT |
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p, l, l1
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1 |
2 |
3 |
4 |
a |
K |
G |
A |
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b |
K |
A |
G |
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c |
G |
A |
K |
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d |
G |
K |
A |
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e |
A |
G |
K |
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f |
A |
K |
G |
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g |
K |
G |
A |
Geh |
h |
K |
A |
G |
Geh |
h1 |
K |
A |
G |
A |
j |
G |
A |
K |
Geh |
k |
G |
K |
A |
Geh |
l |
A |
G |
K |
Geh |
m |
A |
K |
G |
Geh |
n |
K |
- |
G |
A |
o |
K |
- |
A |
G |
p |
A |
A |
G |
K |
q |
T1 |
T2 |
G |
T2 |
r |
A1 |
G |
A2 |
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s |
A1 |
A2 |
G |
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§A + Geh./case/boîter/invol.
&K + Geh./case/boîter/invol.
*K= A1 (Triac) A= A2 (Triac)
Tetroden
a |
K |
Gk |
Ga |
A |
b |
A |
K |
Ga |
Gk |
c |
Gk |
K |
Ga |
A |
d |
K |
Gk |
A |
Ga |
e |
Gk |
K |
A |
Ga |
f |
K |
Ga |
Gk |
A |
§Ga + Geh./case/boîter/invol.
a |
A |
K |
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b |
K |
A |
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c |
A |
- |
K |
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d |
K |
- |
A |
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e |
A2 |
G |
A1 |
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f |
A2 |
A1 |
G |
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g |
K |
G |
A |
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h |
A |
K |
G |
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m |
B1 |
- |
B2 |
E |
n |
B1 |
E |
B2 |
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o |
B2 |
E |
B1 |
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p |
E |
B1 |
B2 |
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q |
B1 |
B2 |
E |
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r |
E |
B1 |
- |
B2 |
s |
E |
B2 |
B1 |
|
t |
B2 |
B1 |
E |
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§B2 + Geh./case/boîter/invol.
&G + Geh./case/boîter/invol.
**K= A1 (Diac) A= A2 (Diac)
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a |
output |
input |
Gnd |
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b |
input |
Gnd |
output |
(Gnd) |
c |
Gnd |
input |
output |
(input) |
d |
output |
Gnd |
input |
|
e |
input |
output |
Gnd |
|
f |
Gnd |
output |
input |
|
g |
A |
- |
K |
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h |
A |
K |
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j |
K |
- |
A |
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k |
input |
Reg |
output |
|
l |
reg |
output |
input |
|
moutput Reg input
n |
reg |
input |
output |
o |
input |
output |
Reg |
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||
Reg |
= Regelung/adjust |
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|
Orderform
Orderno. |
Title |
Qty. |
Price/€ * |
|
Total |
|
|
|
|
|
|
vrt 1 |
|
29,00 |
€ |
|
|
|
|
|
|
|
|
vrt 2 |
|
21,00 |
€ |
|
|
|
|
|
|
|
|
14 |
mem data book memories |
|
17,60 |
€ |
|
|
|
|
|
|
|
32 |
ddv 1 data book diodes |
|
30,17 |
€ |
|
|
|
|
|
|
|
33 |
ddv 2 data book diodes 0..1N..1S..µ |
|
25,03 |
€ |
|
|
|
|
|
|
|
101 |
tdv 1 data book transistor |
|
30,17 |
€ |
|
|
|
|
|
|
|
104 |
tdv 4 data book transistor 2..40000..µ |
|
35,28 |
€ |
|
|
|
|
|
|
|
113 |
|
40,39 |
€ |
|
|
|
|
|
|
|
|
114 |
STK and STR data book hybrid ICs |
|
19,90 |
€ |
|
|
|
|
|
|
|
115 |
Audio Amp data book audio amplifier |
|
19,90 |
€ |
|
|
|
|
|
|
|
201 |
transistor 1 comparison table |
|
7,60 |
€ |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
52,00 |
€ |
|
||
|
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|
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|
|
404 |
|
25,00 |
€ |
|
|
|
|
|
|
|
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|
52,00 |
€ |
|
||
|
|
|
|
|
|
|
89,00 |
€ |
|
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Shipping/handling inside Europe |
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Please contact us for shipping costs outside Europe order@eca.de |
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Total including VAT |
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* Price in Euro incl. German VAT
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Please mail or fax to: ECA Fodermayrstr.24,
vrt A...L |
volume 1a |
volume 1b |
part numbers from A to L |
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1N... |
2S...60000... to µ |
table
Edition 2010/2011 |
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Edition 2008/2009
vergleichstabelle comparison table table d’ équivalence tabella comparativa tabla comparativa
transistor thyristor smd code diode
ic linear digital analog
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test |
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XXI V |
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n e w
comparison
www.eca.de |
www.eca.de |
Th e v r t com pa r ison t a ble |
www.eca.de
Equivalent Reference Tables for t r a n sist or s, diode s, t h y r ist or s a n d I Cs. Now as n e w e dit ion 2 0 1 0 / 2 0 1 1 div ide d in t o t w o book s. This book series covers m ore than 1 8 0 ,0 0 0 t y pe s with m ore than 2 2 0 ,0 0 0
e qu iv a le n t t y pe s.
Each type is provided with inform ation as to device fam ily, short- form description, m anufacturer and the salient electrical data,along with the dim ensioned outline drawing and pin assignm ents.
The type- related r e f e r e n ce book index assists you in quickly finding further inform ation on the online data base server h t t p : / / w w w . e ca d a t a . d e , like pin out of I Cs or other relevant inform ation.
v r t v olu m e 1 A... Z
Edition 2010/ 2011, n ow 1 4 9 6 pa ge s.
divided into 2 books vrt1a A to L 748 pages vrt1b M to Z 748 pages Size 16,5x24cm
I SBN 978- 3- 937469- 37- 9 • Order- No. 34- 10
v r t v olu m e 2 0 .. 1 N ... |
2 S.. 6 0 0 0 0 ... µ |
Edition 2010/ 2011, 6 8 0 pa ge s. |
|
I SBN 978- 3- 937469- 38 |
- 6 • Order- No. 35- 10 |
2008 |
Also on DVD available, please refer to t h e n e w v r t - dv d . |
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Edition |
data base |
|
|
semiconductor |
|
|
data base |
|
|
data base 2008 |
|
|
300000 |
|
|
transistoren, dioden, |
|
|
thyristoren, ic´s, |
|
Order online at ht t p: / / shop. eca. de - |
order online? |
|
shop.eca .de |
||
Dem o ver sion at ht t p: / / t r ial. eca. de |
||
|
new
The complete data base for all kind of semiconductors on
Beside the search and selection for type, device, manufacturer, case outline,
The new updated data base version 2011 contains the data of integrated circuits, transistors, diodes, FETs,thyristors, UJTs., operational amplifier, voltage regulator,... with all important details, as well as the access to the original of data sheets in pdf® format if available.
Contents:
•over 95.000 diodes
•over 65.000 FETs
•over 135.000 transistors
•over 18.000 thyristors
•over 130.000 integrated circuits
divided into different data sheets. This new dvd includes additional the data bases of the
Further information and illustrations of
System requirements: Min. Pentium III system, Windows XP/VISTA/Windows 7 and a DVD drive assembly.
Multilingual: german, english, french, spanish, portuguese, italian, turkish
Order No.:
|
order online? |
Order online at http://shop.eca.de - |
shop.eca .de |
Demo version at http://trial.eca.de |
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comparison